中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Influence of penetrating v-pits on leakage current of gan based p-i-n uv detector

文献类型:期刊论文

作者Zhang Shuang; Zhao De-Gang; Liu Zong-Shun; Zhu Jian-Jun; Zhang Shu-Ming; Wang Yu-Tian; Duan Li-Hong; Liu Wen-Bao; Jiang De-Sheng; Yang Hui
刊名Acta physica sinica
出版日期2009-11-01
卷号58期号:11页码:7952-7957
关键词Gan Uv detector V-pits Leakage current
ISSN号1000-3290
通讯作者Zhao de-gang(dgzhao@red.semi.ac.cn)
英文摘要The leakage mechanism of gan-based p-i-n (p-algan/i-gan/n-gan) uv detector has been investigated. with the same dislocation density, devices made from material with higher density of v-pits on surface produce larger leakage current. sem images show that some v-pits penetrate into i-gan layer, sometimes even the n-gan layer. if p-ohmic contact metal (ni/au) deposits in the v-pits, schottky contact would be formed at the interface of metal and i-gan, or form ohmic contact at the interface of metal and n-gan. the existence of parallel schottky junction and ohmic contact resistance enhances the leakage current greatly.
WOS研究方向Physics
WOS类目Physics, Multidisciplinary
语种英语
WOS记录号WOS:000271835200088
出版者CHINESE PHYSICAL SOC
URI标识http://www.irgrid.ac.cn/handle/1471x/2427559
专题半导体研究所
通讯作者Zhao De-Gang
作者单位Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Zhang Shuang,Zhao De-Gang,Liu Zong-Shun,et al. Influence of penetrating v-pits on leakage current of gan based p-i-n uv detector[J]. Acta physica sinica,2009,58(11):7952-7957.
APA Zhang Shuang.,Zhao De-Gang.,Liu Zong-Shun.,Zhu Jian-Jun.,Zhang Shu-Ming.,...&Yang Hui.(2009).Influence of penetrating v-pits on leakage current of gan based p-i-n uv detector.Acta physica sinica,58(11),7952-7957.
MLA Zhang Shuang,et al."Influence of penetrating v-pits on leakage current of gan based p-i-n uv detector".Acta physica sinica 58.11(2009):7952-7957.

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来源:半导体研究所

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