Influence of penetrating v-pits on leakage current of gan based p-i-n uv detector
文献类型：期刊论文
| 作者 | Zhang Shuang; Zhao De-Gang; Liu Zong-Shun; Zhu Jian-Jun; Zhang Shu-Ming; Wang Yu-Tian; Duan Li-Hong; Liu Wen-Bao; Jiang De-Sheng; Yang Hui |
| 刊名 | Acta physica sinica
 |
| 出版日期 | 2009-11-01 |
| 卷号 | 58期号:11页码:7952-7957 |
| 关键词 | Gan Uv detector V-pits Leakage current |
| ISSN号 | 1000-3290 |
| 通讯作者 | Zhao de-gang(dgzhao@red.semi.ac.cn) |
| 英文摘要 | The leakage mechanism of gan-based p-i-n (p-algan/i-gan/n-gan) uv detector has been investigated. with the same dislocation density, devices made from material with higher density of v-pits on surface produce larger leakage current. sem images show that some v-pits penetrate into i-gan layer, sometimes even the n-gan layer. if p-ohmic contact metal (ni/au) deposits in the v-pits, schottky contact would be formed at the interface of metal and i-gan, or form ohmic contact at the interface of metal and n-gan. the existence of parallel schottky junction and ohmic contact resistance enhances the leakage current greatly. |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000271835200088 |
| 出版者 | CHINESE PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427559 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhao De-Gang |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang Shuang,Zhao De-Gang,Liu Zong-Shun,et al. Influence of penetrating v-pits on leakage current of gan based p-i-n uv detector[J]. Acta physica sinica,2009,58(11):7952-7957. |
| APA | Zhang Shuang.,Zhao De-Gang.,Liu Zong-Shun.,Zhu Jian-Jun.,Zhang Shu-Ming.,...&Yang Hui.(2009).Influence of penetrating v-pits on leakage current of gan based p-i-n uv detector.Acta physica sinica,58(11),7952-7957. |
| MLA | Zhang Shuang,et al."Influence of penetrating v-pits on leakage current of gan based p-i-n uv detector".Acta physica sinica 58.11(2009):7952-7957. |
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来源：半导体研究所
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