Synthesis and characterization of gan nanowires
文献类型：期刊论文
| 作者 | Wang, Ying; Xue, Chengshan; Zhuang, Huizhao; Wang, Zouping; Zhang, Dongdong; Huang, Yinglong; Liu, Wenjun |
| 刊名 | Applied surface science
 |
| 出版日期 | 2009-06-15 |
| 卷号 | 255期号:17页码:7719-7722 |
| 关键词 | Nanowires Cvd Xrd |
| ISSN号 | 0169-4332 |
| DOI | 10.1016/j.apsusc.2009.04.147 |
| 通讯作者 | Xue, chengshan(xuechengshan@sdnu.edu.cn) |
| 英文摘要 | In this work, gan nanowires were fabricated on si substrates coated with nicl(2) thin films using chemical vapor deposition (cvd) method by evaporating ga(2)o(3) powder at 1100 degrees c in ammonia gas flow. x-ray diffraction (xrd), scanning electron microscopy (sem), high-resolution transmission electron microscope (hrtem) and photoluminescence (pl) spectrum are used to characterize the samples. the results demonstrate that the nanowires are single-crystal gan with hexagonal wurtzite structure. the growth mechanism of gan nanowires is also discussed. (c) 2009 elsevier b. v. all rights reserved. |
| WOS关键词 | PHOTOLUMINESCENCE ; NANORODS |
| WOS研究方向 | Chemistry ; Materials Science ; Physics |
| WOS类目 | Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000266567400044 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427560 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xue, Chengshan |
| 作者单位 | Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Ying,Xue, Chengshan,Zhuang, Huizhao,et al. Synthesis and characterization of gan nanowires[J]. Applied surface science,2009,255(17):7719-7722. |
| APA | Wang, Ying.,Xue, Chengshan.,Zhuang, Huizhao.,Wang, Zouping.,Zhang, Dongdong.,...&Liu, Wenjun.(2009).Synthesis and characterization of gan nanowires.Applied surface science,255(17),7719-7722. |
| MLA | Wang, Ying,et al."Synthesis and characterization of gan nanowires".Applied surface science 255.17(2009):7719-7722. |
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来源：半导体研究所
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