中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Inductively coupled plasma etching in fabrication of 2d inp-based photonic crystals

文献类型:期刊论文

作者Wang, Hailing; Xing, Mingxin; Ren, Gang; Zheng, Wanhua
刊名Journal of vacuum science & technology b
出版日期2009-05-01
卷号27期号:3页码:1093-1096
关键词Iii-v semiconductors Indium compounds Photonic crystals Plasma materials processing Semiconductor lasers Sputter etching
ISSN号1071-1023
DOI10.1116/1.3125268
通讯作者Zheng, wanhua(whzheng@red.semi.ac.cn)
英文摘要The authors developed an inductively coupled plasma etching process for the fabrication of hole-type photonic crystals in inp. the etching was performed at 70 degrees c using bcl(3)/cl(2) chemistries. a high etch rate of 1.4 mu m/min was obtained for 200 nm diameter holes. the process also yields nearly cylindrical hole shape with a 10.8 aspect ratio and more than 85 degrees straightness of the smooth sidewall. surface-emitting photonic crystal laser and edge emitting one were demonstrated in the experiments.
WOS关键词CHEMISTRIES ; INGAASP/INP ; LASER ; CL-2
WOS研究方向Engineering ; Science & Technology - Other Topics ; Physics
WOS类目Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology ; Physics, Applied
语种英语
WOS记录号WOS:000266500300018
出版者A V S AMER INST PHYSICS
URI标识http://www.irgrid.ac.cn/handle/1471x/2427561
专题半导体研究所
通讯作者Zheng, Wanhua
作者单位Chinese Acad Sci, Inst Semicond, Nanooptoelect Lab, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Wang, Hailing,Xing, Mingxin,Ren, Gang,et al. Inductively coupled plasma etching in fabrication of 2d inp-based photonic crystals[J]. Journal of vacuum science & technology b,2009,27(3):1093-1096.
APA Wang, Hailing,Xing, Mingxin,Ren, Gang,&Zheng, Wanhua.(2009).Inductively coupled plasma etching in fabrication of 2d inp-based photonic crystals.Journal of vacuum science & technology b,27(3),1093-1096.
MLA Wang, Hailing,et al."Inductively coupled plasma etching in fabrication of 2d inp-based photonic crystals".Journal of vacuum science & technology b 27.3(2009):1093-1096.

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来源:半导体研究所

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