Inductively coupled plasma etching in fabrication of 2d inp-based photonic crystals
文献类型:期刊论文
作者 | Wang, Hailing; Xing, Mingxin; Ren, Gang; Zheng, Wanhua |
刊名 | Journal of vacuum science & technology b
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出版日期 | 2009-05-01 |
卷号 | 27期号:3页码:1093-1096 |
关键词 | Iii-v semiconductors Indium compounds Photonic crystals Plasma materials processing Semiconductor lasers Sputter etching |
ISSN号 | 1071-1023 |
DOI | 10.1116/1.3125268 |
通讯作者 | Zheng, wanhua(whzheng@red.semi.ac.cn) |
英文摘要 | The authors developed an inductively coupled plasma etching process for the fabrication of hole-type photonic crystals in inp. the etching was performed at 70 degrees c using bcl(3)/cl(2) chemistries. a high etch rate of 1.4 mu m/min was obtained for 200 nm diameter holes. the process also yields nearly cylindrical hole shape with a 10.8 aspect ratio and more than 85 degrees straightness of the smooth sidewall. surface-emitting photonic crystal laser and edge emitting one were demonstrated in the experiments. |
WOS关键词 | CHEMISTRIES ; INGAASP/INP ; LASER ; CL-2 |
WOS研究方向 | Engineering ; Science & Technology - Other Topics ; Physics |
WOS类目 | Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology ; Physics, Applied |
语种 | 英语 |
WOS记录号 | WOS:000266500300018 |
出版者 | A V S AMER INST PHYSICS |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427561 |
专题 | 半导体研究所 |
通讯作者 | Zheng, Wanhua |
作者单位 | Chinese Acad Sci, Inst Semicond, Nanooptoelect Lab, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Wang, Hailing,Xing, Mingxin,Ren, Gang,et al. Inductively coupled plasma etching in fabrication of 2d inp-based photonic crystals[J]. Journal of vacuum science & technology b,2009,27(3):1093-1096. |
APA | Wang, Hailing,Xing, Mingxin,Ren, Gang,&Zheng, Wanhua.(2009).Inductively coupled plasma etching in fabrication of 2d inp-based photonic crystals.Journal of vacuum science & technology b,27(3),1093-1096. |
MLA | Wang, Hailing,et al."Inductively coupled plasma etching in fabrication of 2d inp-based photonic crystals".Journal of vacuum science & technology b 27.3(2009):1093-1096. |
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来源:半导体研究所
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