Origin and enhancement of hole-induced ferromagnetism in first-row d(0) semiconductors
文献类型：期刊论文
| 作者 | Peng, Haowei1; Xiang, H. J.2; Wei, Su-Huai2; Li, Shu-Shen1; Xia, Jian-Bai1; Li, Jingbo1 |
| 刊名 | Physical review letters
 |
| 出版日期 | 2009-01-09 |
| 卷号 | 102期号:1页码:4 |
| ISSN号 | 0031-9007 |
| DOI | 10.1103/physrevlett.102.017201 |
| 通讯作者 | Peng, haowei() |
| 英文摘要 | The origin of ferromagnetism in d(0) semiconductors is studied using first-principles methods with zno as a prototype material. we show that the presence of spontaneous magnetization in nitrides and oxides with sufficient holes is an intrinsic property of these first-row d(0) semiconductors and can be attributed to the localized nature of the 2p states of o and n. we find that acceptor doping, especially doping at the anion site, can enhance the ferromagnetism with much smaller threshold hole concentrations. the quantum confinement effect also reduces the critical hole concentration to induce ferromagnetism in zno nanowires. the characteristic nonmonotonic spin couplings in these systems are explained in terms of the band coupling model. |
| WOS关键词 | COLLECTIVE ELECTRON FERROMAGNETISM ; ENERGY ; MODEL |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000262355000064 |
| 出版者 | AMER PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427566 |
| 专题 | 半导体研究所 |
| 通讯作者 | Peng, Haowei |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.Natl Renewable Energy Lab, Golden, CO 80401 USA |
| 推荐引用方式 GB/T 7714 | Peng, Haowei,Xiang, H. J.,Wei, Su-Huai,et al. Origin and enhancement of hole-induced ferromagnetism in first-row d(0) semiconductors[J]. Physical review letters,2009,102(1):4. |
| APA | Peng, Haowei,Xiang, H. J.,Wei, Su-Huai,Li, Shu-Shen,Xia, Jian-Bai,&Li, Jingbo.(2009).Origin and enhancement of hole-induced ferromagnetism in first-row d(0) semiconductors.Physical review letters,102(1),4. |
| MLA | Peng, Haowei,et al."Origin and enhancement of hole-induced ferromagnetism in first-row d(0) semiconductors".Physical review letters 102.1(2009):4. |
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来源：半导体研究所
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