Evolution of surface morphology and photoluminescence characteristics of 1.3-mu m in0.5ga0.5as/gaas quantum dots grown by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Wei, Quanxiang1; Ren, Zhengwei2; He, Zhenhong2; Niu, Zhichuan2 |
| 刊名 | Chinese optics letters
 |
| 出版日期 | 2009-01-10 |
| 卷号 | 7期号:1页码:52-55 |
| ISSN号 | 1671-7694 |
| DOI | 10.3788/col20090701.0052 |
| 通讯作者 | Wei, quanxiang(qx.wei@163.com) |
| 英文摘要 | Evolution of surface morphology and optical characteristics of 1.3-mu m in0.5ga0.5as/gaas quantum dots (qds) grown by molecular beam epitaxy (mbe) are investigated by atomic force microscopy (afm) and photoluminescence (pl). after deposition of 16 monolayers (ml) of in0.5ga0.5as, qds are formed and elongated along the [110] direction when using sub-ml depositions, while large size ingaas qds with better uniformity are formed when using ml or super-ml depositions. it is also found that the larger size qds show enhanced pl efficiency without optical nonlinearity, which is in contrast to the elongated qds. |
| WOS关键词 | 1.3 MU-M ; ROOM-TEMPERATURE ; OPTICAL-PROPERTIES ; CAP LAYER ; GAAS ; DEPOSITION |
| WOS研究方向 | Optics |
| WOS类目 | Optics |
| 语种 | 英语 |
| WOS记录号 | WOS:000266970500016 |
| 出版者 | CHINESE LASER PRESS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427567 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wei, Quanxiang |
| 作者单位 | 1.Shanxi Univ, Dept Phys, Taiyuan 030006, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wei, Quanxiang,Ren, Zhengwei,He, Zhenhong,et al. Evolution of surface morphology and photoluminescence characteristics of 1.3-mu m in0.5ga0.5as/gaas quantum dots grown by molecular beam epitaxy[J]. Chinese optics letters,2009,7(1):52-55. |
| APA | Wei, Quanxiang,Ren, Zhengwei,He, Zhenhong,&Niu, Zhichuan.(2009).Evolution of surface morphology and photoluminescence characteristics of 1.3-mu m in0.5ga0.5as/gaas quantum dots grown by molecular beam epitaxy.Chinese optics letters,7(1),52-55. |
| MLA | Wei, Quanxiang,et al."Evolution of surface morphology and photoluminescence characteristics of 1.3-mu m in0.5ga0.5as/gaas quantum dots grown by molecular beam epitaxy".Chinese optics letters 7.1(2009):52-55. |
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来源：半导体研究所
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