Well-width dependence of in-plane optical anisotropy in (001) gaas/algaas quantum wells induced by in-plane uniaxial strain and interface asymmetry
文献类型：期刊论文
| 作者 | Tang, C. G.; Chen, Y. H.; Xu, B.; Ye, X. L.; Wang, Z. G. |
| 刊名 | Journal of applied physics
 |
| 出版日期 | 2009-05-15 |
| 卷号 | 105期号:10页码:6 |
| 关键词 | Aluminium compounds Gallium arsenide Iii-v semiconductors Internal stresses Reflectivity Semiconductor heterojunctions Semiconductor quantum wells |
| ISSN号 | 0021-8979 |
| DOI | 10.1063/1.3132089 |
| 通讯作者 | Chen, y. h.(yhchen@red.semi.ac.cn) |
| 英文摘要 | The well-width dependence of in-plane optical anisotropy (ipoa) in (001) gaas/al(x)ga(1-x)as quantum wells induced by in-plane uniaxial strain and interface asymmetry has been studied comprehensively. theoretical calculations show that the ipoa induced by in-plane uniaxial strain and interface asymmetry exhibits much different well-width dependence. the strain-induced ipoa is inversely proportional to the energy spacing between heavy- and light-hole subbands, so it increases with the well width. however, the interface-related ipoa is mainly determined by the probability that the heavy- and light-holes appear at the interfaces, so it decreases with the well width. reflectance difference spectroscopy has been carried out to measure the ipoa of (001) gaas/al(x)ga(1-x)as quantum wells with different well widths. strain- and interface-induced ipoa have been distinguished by using a stress apparatus, and good agreement with the theoretical prediction is obtained. the anisotropic interface potential parameters are also determined. in addition, the energy shift between the interface- and strain-induced 1h1e reflectance difference (rd) structures, and the deviation of the 1l1e rd signal away from the prediction of the calculation model have been discussed. |
| WOS关键词 | INVERSION ASYMMETRY ; HETEROSTRUCTURES ; SEMICONDUCTORS ; STRESS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000266500100057 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427569 |
| 专题 | 半导体研究所 |
| 通讯作者 | Chen, Y. H. |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Tang, C. G.,Chen, Y. H.,Xu, B.,et al. Well-width dependence of in-plane optical anisotropy in (001) gaas/algaas quantum wells induced by in-plane uniaxial strain and interface asymmetry[J]. Journal of applied physics,2009,105(10):6. |
| APA | Tang, C. G.,Chen, Y. H.,Xu, B.,Ye, X. L.,&Wang, Z. G..(2009).Well-width dependence of in-plane optical anisotropy in (001) gaas/algaas quantum wells induced by in-plane uniaxial strain and interface asymmetry.Journal of applied physics,105(10),6. |
| MLA | Tang, C. G.,et al."Well-width dependence of in-plane optical anisotropy in (001) gaas/algaas quantum wells induced by in-plane uniaxial strain and interface asymmetry".Journal of applied physics 105.10(2009):6. |
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来源：半导体研究所
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