Revised ab initio natural band offsets of all group iv, ii-vi, and iii-v semiconductors
文献类型：期刊论文
| 作者 | Li, Yong-Hua1; Walsh, Aron2; Chen, Shiyou1; Yin, Wan-Jian1; Yang, Ji-Hui1; Li, Jingbo3; Da Silva, Juarez L. F.2; Gong, X. G.1; Wei, Su-Huai2 |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2009-05-25 |
| 卷号 | 94期号:21页码:3 |
| 关键词 | Ab initio calculations Band structure Cadmium compounds Iii-v semiconductors Ii-vi semiconductors Iv-vi semiconductors Zinc compounds |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.3143626 |
| 通讯作者 | Li, yong-hua() |
| 英文摘要 | Using an all-electron band structure approach, we have systematically calculated the natural band offsets between all group iv, iii-v, and ii-vi semiconductor compounds, taking into account the deformation potential of the core states. this revised approach removes assumptions regarding the reference level volume deformation and offers a more reliable prediction of the "natural" unstrained offsets. comparison is made to experimental work, where a noticeable improvement is found compared to previous methodologies. |
| WOS关键词 | D-ORBITALS ; CONDUCTION ; ENERGY ; RULE |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000266500400027 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427573 |
| 专题 | 半导体研究所 |
| 通讯作者 | Li, Yong-Hua |
| 作者单位 | 1.Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China 2.Natl Renewable Energy Lab, Golden, CO 80401 USA 3.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, Yong-Hua,Walsh, Aron,Chen, Shiyou,et al. Revised ab initio natural band offsets of all group iv, ii-vi, and iii-v semiconductors[J]. Applied physics letters,2009,94(21):3. |
| APA | Li, Yong-Hua.,Walsh, Aron.,Chen, Shiyou.,Yin, Wan-Jian.,Yang, Ji-Hui.,...&Wei, Su-Huai.(2009).Revised ab initio natural band offsets of all group iv, ii-vi, and iii-v semiconductors.Applied physics letters,94(21),3. |
| MLA | Li, Yong-Hua,et al."Revised ab initio natural band offsets of all group iv, ii-vi, and iii-v semiconductors".Applied physics letters 94.21(2009):3. |
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来源：半导体研究所
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