Electroluminescence from ge on si substrate at room temperature
文献类型：期刊论文
| 作者 | Hu, Weixuan; Cheng, Buwen; Xue, Chunlai; Xue, Haiyun; Su, Shaojian; Bai, Anqi; Luo, Liping; Yu, Yude; Wang, Qiming |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2009-08-31 |
| 卷号 | 95期号:9页码:3 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.3216577 |
| 通讯作者 | Cheng, buwen(cbw@semi.ac.cn) |
| 英文摘要 | A ge/si heterojunction light emitting diode with a p(+)-ge/i-ge/n+-si structure was fabricated using the ultrahigh vacuum chemical vapor deposition technology on n+-si substrate. the device had a good i-v rectifying behavior. under forward bias voltage ranging from 1.1 to 2.5 v, electroluminescence around 1565 nm was observed at room temperature. the mechanism of the light emission is discussed by the radiative lifetime and the scattering rate. the results indicate that germanium is a potential candidate for silicon-based light source material. (c) 2009 american institute of physics. [doi: 10.1063/1.3216577] |
| WOS关键词 | SEMICONDUCTORS ; DEPENDENCE ; SILICON ; GAP |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000269625800029 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427576 |
| 专题 | 半导体研究所 |
| 通讯作者 | Cheng, Buwen |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Hu, Weixuan,Cheng, Buwen,Xue, Chunlai,et al. Electroluminescence from ge on si substrate at room temperature[J]. Applied physics letters,2009,95(9):3. |
| APA | Hu, Weixuan.,Cheng, Buwen.,Xue, Chunlai.,Xue, Haiyun.,Su, Shaojian.,...&Wang, Qiming.(2009).Electroluminescence from ge on si substrate at room temperature.Applied physics letters,95(9),3. |
| MLA | Hu, Weixuan,et al."Electroluminescence from ge on si substrate at room temperature".Applied physics letters 95.9(2009):3. |
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来源：半导体研究所
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