Raman scattering study on ga1-xmnxas prepared by mn ions implantation, deposition and post-annealing
文献类型：期刊论文
| 作者 | Islam, M. R.1; Chen, N. F.2; Yamada, M.3 |
| 刊名 | Crystal research and technology
 |
| 出版日期 | 2009-02-01 |
| 卷号 | 44期号:2页码:215-220 |
| ISSN号 | 0232-1300 |
| 关键词 | Raman scattering Ferromagnetic Semiconductor Gamnas Mn ions implantation Deposition |
| DOI | 10.1002/crat.200800215 |
| 通讯作者 | Islam, m. r.(islambit@yahoo.com) |
| 英文摘要 | Raman scattering measurements have been performed in ga1-xmnxas crystals prepared by mn ions implantation, deposition, and post-annealing. the raman spectrum measured from the implanted surface of the sample shows some weak phonon modes in addition to gaas-like phonon modes, where the gaas-like lo and to phonons are found to be shifted by approximately 4 and 2 cm(-1), respectively, in the lower frequency direction compared to those observed from the unimplanted surface of the sample. the weak vibrational modes observed are assigned to hausmannite mn3o4 like. the coupled lo-phonon plasmon mode (clopm), and defects and as related vibrational modes caused by mn ions implantation, deposition, and post-annealing are also observed. the compositional dependence of gaas-like lo phonon frequency is developed for strained and unstrained conditions and then using the observed logaas peak, the mn composition is evaluated to be 0.034. furthermore, by analyzing the intensity of clopm and unscreened logaas phonon mode, the hole density is evaluated to be 1.84 x 10(18) cm(-3). (c) 2009 wiley-vch verlag gmbh & co. kgaa, weinheim |
| WOS关键词 | RESIDUAL STRAIN |
| WOS研究方向 | Crystallography |
| WOS类目 | Crystallography |
| 语种 | 英语 |
| 出版者 | WILEY-BLACKWELL |
| WOS记录号 | WOS:000263448400015 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427581 |
| 专题 | 半导体研究所 |
| 通讯作者 | Islam, M. R. |
| 作者单位 | 1.Khulna Univ Engn & Technol, Dept Elect & Elect Engn, Khulna 9203, Bangladesh 2.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.Kyoto Inst Technol, Dept Elect, Kyoto 6068585, Japan |
| 推荐引用方式 GB/T 7714 | Islam, M. R.,Chen, N. F.,Yamada, M.. Raman scattering study on ga1-xmnxas prepared by mn ions implantation, deposition and post-annealing[J]. Crystal research and technology,2009,44(2):215-220. |
| APA | Islam, M. R.,Chen, N. F.,&Yamada, M..(2009).Raman scattering study on ga1-xmnxas prepared by mn ions implantation, deposition and post-annealing.Crystal research and technology,44(2),215-220. |
| MLA | Islam, M. R.,et al."Raman scattering study on ga1-xmnxas prepared by mn ions implantation, deposition and post-annealing".Crystal research and technology 44.2(2009):215-220. |
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来源：半导体研究所
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