Molecular beam epitaxy of gasb on gaas substrates with alsb buffer layers
文献类型：期刊论文
| 作者 | Zhou Zhi-Qiang; Xu Ying-Qiang; Hao Rui-Ting; Tang Bao; Ren Zheng-Wei; Niu Zhi-Chuan |
| 刊名 | Chinese physics letters
 |
| 出版日期 | 2009 |
| 卷号 | 26期号:1页码:3 |
| ISSN号 | 0256-307X |
| 通讯作者 | Zhou zhi-qiang() |
| 英文摘要 | We investigate the molecular beam epitaxy growth of gasb films on gaas substrates using alsb buffer layers. optimization of alsb growth parameter is aimed at obtaining high gasb crystal quality and smooth gasb surface. the optimized growth temperature and thickness of alsb layers are found to be 450 degrees c and 2.1 nm, respectively. a rms surface roughness of 0.67 nm over 10 x 10 mu m(2) is achieved as a 0.5 mu m gasb film is grown under optimized conditions. |
| WOS关键词 | SURFACE-MORPHOLOGY ; GROWTH ; SUPERLATTICES ; HETEROSTRUCTURES ; TEMPERATURE ; DETECTORS ; GAAS(100) ; FILMS ; INAS ; INSB |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| 出版者 | IOP PUBLISHING LTD |
| WOS记录号 | WOS:000262866100094 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427582 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhou Zhi-Qiang |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhou Zhi-Qiang,Xu Ying-Qiang,Hao Rui-Ting,et al. Molecular beam epitaxy of gasb on gaas substrates with alsb buffer layers[J]. Chinese physics letters,2009,26(1):3. |
| APA | Zhou Zhi-Qiang,Xu Ying-Qiang,Hao Rui-Ting,Tang Bao,Ren Zheng-Wei,&Niu Zhi-Chuan.(2009).Molecular beam epitaxy of gasb on gaas substrates with alsb buffer layers.Chinese physics letters,26(1),3. |
| MLA | Zhou Zhi-Qiang,et al."Molecular beam epitaxy of gasb on gaas substrates with alsb buffer layers".Chinese physics letters 26.1(2009):3. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。