中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Epitaxial growth of alingan quaternary alloys by rf-mbe

文献类型:期刊论文

作者Wang Bao-Zhu1,2; Wang Xiao-Liang2
刊名Journal of inorganic materials
出版日期2009-05-01
卷号24期号:3页码:559-562
关键词Alingan Rf-mbe Structural properties Optical properties
ISSN号1000-324X
DOI10.3724/sp.j.1077.2009.00559
通讯作者Wang bao-zhu(wangbz@semi.ac.cn)
英文摘要Alingan quaternary alloys were successfully grown on sapphire substrate by radio-frequency plasma-excited molecular beam epitaxy (rf-mbe). alingan quaternary alloys with different compositions were acquired by changing the al cell's temperature. the streaky rheed patterns were observed during alingan quaternary alloys growth. scanning electron microscope (sem), rutherford back-scattering spectrometry (rbs), x-ray diffraction (xrd) and cathodoluminescence (cl) were used to characterize the structural and optical properties of the alingan alloys. the experimental results show that the alingan quaternary alloys grow on the gan buffer in the layer-by-layer growth mode. when the al cell's temperature is 920 degrees c, the al/in ratio in the alingan quaternary alloys is about 4.7, and the alingan can acquire better crystal and optical quality. the x-ray and cl full-width at half-maximum (fwhm) of the alingan are 5arcmin and 25nm, respectively.
WOS关键词MOLECULAR-BEAM EPITAXY
WOS研究方向Materials Science
WOS类目Materials Science, Ceramics
语种英语
WOS记录号WOS:000266303700028
出版者SCIENCE PRESS
URI标识http://www.irgrid.ac.cn/handle/1471x/2427583
专题半导体研究所
通讯作者Wang Bao-Zhu
作者单位1.Hebei Univ Sci & Technol, Inst Informat Sci & Technol, Shijiazhuang 050018, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式
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Wang Bao-Zhu,Wang Xiao-Liang. Epitaxial growth of alingan quaternary alloys by rf-mbe[J]. Journal of inorganic materials,2009,24(3):559-562.
APA Wang Bao-Zhu,&Wang Xiao-Liang.(2009).Epitaxial growth of alingan quaternary alloys by rf-mbe.Journal of inorganic materials,24(3),559-562.
MLA Wang Bao-Zhu,et al."Epitaxial growth of alingan quaternary alloys by rf-mbe".Journal of inorganic materials 24.3(2009):559-562.

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来源:半导体研究所

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