High responsivity resonant-cavity-enhanced ingaas/gaas quantum-dot photodetector for wavelength of similar to 1 mu m at room temperature
文献类型：期刊论文
| 作者 | Sun, X. M.; Zhang, H.; Zhu, H.; Xu, P.; Li, G. R.; Liu, J.; Zheng, H. Z. |
| 刊名 | Electronics letters
 |
| 出版日期 | 2009-03-12 |
| 卷号 | 45期号:6页码:329-330 |
| ISSN号 | 0013-5194 |
| DOI | 10.1049/el.2009.0033 |
| 通讯作者 | Sun, x. m.() |
| 英文摘要 | The characteristics of a resonant cavity-enhanced ingaas/gaas quantum-dot n-i-n photodiode with only a bottom distributed bragg reflector used as the cavity mirror, are reported. to suppress the dark current, an alas layer is inserted into the device structure as the blocking layer. it turns out that the structure still possesses the resonant coupling nature, and makes rabi splitting discernible in the photoluminescence spectra. the measured responsivity spectrum of the photocurrent shows a peak at lambda = 1030 nm, and increases rapidly as the bias voltage increases. a peak responsivity of 0.75 a/w, or equivalently an external quantum efficiency of 90.3%, is obtained at v(bias) = -1.4 v. |
| WOS关键词 | PHOTODIODE |
| WOS研究方向 | Engineering |
| WOS类目 | Engineering, Electrical & Electronic |
| 语种 | 英语 |
| 出版者 | INST ENGINEERING TECHNOLOGY-IET |
| WOS记录号 | WOS:000264453300026 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427589 |
| 专题 | 半导体研究所 |
| 通讯作者 | Sun, X. M. |
| 作者单位 | Chinese Acad Sci, State Key Lab Microstruct & Superlattices, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Sun, X. M.,Zhang, H.,Zhu, H.,et al. High responsivity resonant-cavity-enhanced ingaas/gaas quantum-dot photodetector for wavelength of similar to 1 mu m at room temperature[J]. Electronics letters,2009,45(6):329-330. |
| APA | Sun, X. M..,Zhang, H..,Zhu, H..,Xu, P..,Li, G. R..,...&Zheng, H. Z..(2009).High responsivity resonant-cavity-enhanced ingaas/gaas quantum-dot photodetector for wavelength of similar to 1 mu m at room temperature.Electronics letters,45(6),329-330. |
| MLA | Sun, X. M.,et al."High responsivity resonant-cavity-enhanced ingaas/gaas quantum-dot photodetector for wavelength of similar to 1 mu m at room temperature".Electronics letters 45.6(2009):329-330. |
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来源：半导体研究所
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