Zero biased ge-on-si photodetector with a bandwidth of 4.72 ghz at 1550 nm
文献类型：期刊论文
| 作者 | Xue Hai-Yun; Xue Chun-Lai; Cheng Bu-Wen; Yu Yu-De; Wang Qi-Ming |
| 刊名 | Chinese physics b
 |
| 出版日期 | 2009-06-01 |
| 卷号 | 18期号:6页码:2542-2544 |
| ISSN号 | 1674-1056 |
| 关键词 | Si-based Ge Epitaxy Photodetector |
| 通讯作者 | Xue hai-yun() |
| 英文摘要 | High quality ge was epitaxially grown on si using ultrahigh vacuum/chemical vapor deposition (uhv/cvd). this paper demonstrates efficient germanium-on-silicon p-i-n photodetectors with 0.8 mu m ge, with responsivities as high as 0.38 and 0.21 a/w at 1.31 and 1.55 mu m, respectively. the dark current density is 0.37 ma/cm(2) and 29.4 ma/cm(2) at 0 v and a reverse bias of 0.5 v. the detector with a diameter of 30 mu m, a 3 db-bandwidth of 4.72 ghz at an incident wavelength of 1550 nm and zero external bias has been measured. at a reverse bias of 3 v, the bandwidth is 6.28 ghz. |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| 出版者 | IOP PUBLISHING LTD |
| WOS记录号 | WOS:000266577300070 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427594 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xue Hai-Yun |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xue Hai-Yun,Xue Chun-Lai,Cheng Bu-Wen,et al. Zero biased ge-on-si photodetector with a bandwidth of 4.72 ghz at 1550 nm[J]. Chinese physics b,2009,18(6):2542-2544. |
| APA | Xue Hai-Yun,Xue Chun-Lai,Cheng Bu-Wen,Yu Yu-De,&Wang Qi-Ming.(2009).Zero biased ge-on-si photodetector with a bandwidth of 4.72 ghz at 1550 nm.Chinese physics b,18(6),2542-2544. |
| MLA | Xue Hai-Yun,et al."Zero biased ge-on-si photodetector with a bandwidth of 4.72 ghz at 1550 nm".Chinese physics b 18.6(2009):2542-2544. |
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来源：半导体研究所
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