Synthesis of gan nanowires with tantalum catalyst by magnetron sputtering
文献类型:期刊论文
作者 | Xue Chengshan; Li Hong; Zhuang Huizhao; Chen Jinhua; Yang Zhaozhu; Qin Lixia; Wang Ying; Wang Zouping |
刊名 | Rare metal materials and engineering
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出版日期 | 2009-07-01 |
卷号 | 38期号:7页码:1129-1131 |
关键词 | Nanostructures Nitrides Sputtering |
ISSN号 | 1002-185X |
通讯作者 | Xue chengshan(xuechengshan@sdnu.edu.cn) |
英文摘要 | Single crystalline wurzite gan nanowires were synthesized through ammoniating ga(2)o(3)/ta films by rf magnetron sputtering. the products were characterized by x-ray diffraction (xrd), scanning electron microscopy (sem), high-resolution transmission electron microscopy (hrtem), selected-area electron diffraction (saed) and photoluminescence (pl). the results show that the nanowires have a hexagonal wurtzite structure with diameters ranging from 20 nm to 60 nm and lengths typically up to 10 gm. the pl spectrum exhibits a strong uv light emission at 363 nm. the growth mechanism of the crystalline gan nanowires is discussed briefly. |
WOS关键词 | GALLIUM NITRIDE ; PHOTOLUMINESCENCE ; GROWTH |
WOS研究方向 | Materials Science ; Metallurgy & Metallurgical Engineering |
WOS类目 | Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
语种 | 英语 |
WOS记录号 | WOS:000269071700001 |
出版者 | NORTHWEST INST NONFERROUS METAL RESEARCH |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427596 |
专题 | 半导体研究所 |
通讯作者 | Xue Chengshan |
作者单位 | Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China |
推荐引用方式 GB/T 7714 | Xue Chengshan,Li Hong,Zhuang Huizhao,et al. Synthesis of gan nanowires with tantalum catalyst by magnetron sputtering[J]. Rare metal materials and engineering,2009,38(7):1129-1131. |
APA | Xue Chengshan.,Li Hong.,Zhuang Huizhao.,Chen Jinhua.,Yang Zhaozhu.,...&Wang Zouping.(2009).Synthesis of gan nanowires with tantalum catalyst by magnetron sputtering.Rare metal materials and engineering,38(7),1129-1131. |
MLA | Xue Chengshan,et al."Synthesis of gan nanowires with tantalum catalyst by magnetron sputtering".Rare metal materials and engineering 38.7(2009):1129-1131. |
入库方式: iSwitch采集
来源:半导体研究所
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