Dislocation core effect scattering in a quasitriangle potential well
文献类型：期刊论文
| 作者 | Xu, Xiaoqing; Liu, Xianglin; Yang, Shaoyan; Liu, Jianming; Wei, Hongyuan; Zhu, Qinsheng; Wang, Zhanguo |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2009-03-16 |
| 卷号 | 94期号:11页码:3 |
| 关键词 | Aluminium compounds Carrier density Carrier mobility Dislocation density Dislocation scattering Gallium compounds Iii-v semiconductors Semiconductor heterojunctions Wide band gap semiconductors |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.3098356 |
| 通讯作者 | Xu, xiaoqing() |
| 英文摘要 | A theory of scattering by charged dislocation lines in a quasitriangle potential well of alxga1-xn/gan heterostructures is developed. the dependence of mobility on carrier sheet density and dislocation density is obtained. the results are compared with those obtained from a perfect two-dimensional electron gas and the reason for discrepancy is given. |
| WOS关键词 | ELECTRON-MOBILITY ; ALGAN/GAN HETEROSTRUCTURES ; GAN |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000264380300033 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427598 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xu, Xiaoqing |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xu, Xiaoqing,Liu, Xianglin,Yang, Shaoyan,et al. Dislocation core effect scattering in a quasitriangle potential well[J]. Applied physics letters,2009,94(11):3. |
| APA | Xu, Xiaoqing.,Liu, Xianglin.,Yang, Shaoyan.,Liu, Jianming.,Wei, Hongyuan.,...&Wang, Zhanguo.(2009).Dislocation core effect scattering in a quasitriangle potential well.Applied physics letters,94(11),3. |
| MLA | Xu, Xiaoqing,et al."Dislocation core effect scattering in a quasitriangle potential well".Applied physics letters 94.11(2009):3. |
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来源：半导体研究所
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