Enhancement of conductivity and transmittance of zno films by post hydrogen plasma treatment
文献类型：期刊论文
| 作者 | Cai, P. F.; You, J. B.; Zhang, X. W.; Dong, J. J.; Yang, X. L.; Yin, Z. G.; Chen, N. F. |
| 刊名 | Journal of applied physics
 |
| 出版日期 | 2009-04-15 |
| 卷号 | 105期号:8页码:6 |
| 关键词 | Annealing Carrier density Carrier mobility Diffusion Electrical conductivity Electrical resistivity Hydrogen Ii-vi semiconductors Impurity states Interstitials Light transmission Plasma materials processing Semiconductor thin films Sputter deposition Vacancies (crystal) Visible spectra Wide band gap semiconductors Zinc compounds |
| ISSN号 | 0021-8979 |
| DOI | 10.1063/1.3108543 |
| 通讯作者 | Zhang, x. w.(xwzhang@semi.ac.cn) |
| 英文摘要 | We studied the effects of hydrogen plasma treatment on the electrical and optical properties of zno films deposited by radio frequency magnetron sputtering. it is found that the zno:h film is highly transparent with the average transmittance of 92% in the visible range. both carrier concentration and mobility are increased after hydrogen plasma treatment, correspondingly, the resistivity of the zno:h films achieves the order of 10(-3) cm. we suggest that the incorporated hydrogen not only passivates most of the defects and/or acceptors present, but also introduces shallow donor states such as the v-o-h complex and the interstitial hydrogen h-i. moreover, the annealing data indicate that h-i is unstable in zno, while the v-o-h complex remains stable on the whole at 400 degrees c, and the latter diffuses out when the annealing temperature increases to 500 degrees c. these results make zno:h more attractive for future applications as transparent conducting electrodes. |
| WOS关键词 | THIN-FILMS ; OPTICAL-PROPERTIES ; ZINC-OXIDE ; ELECTRICAL STABILITY ; INTERFERENCE METHOD ; UV EMISSION ; THICKNESS ; PHOTOLUMINESCENCE |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000268064700086 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427608 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, X. W. |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Cai, P. F.,You, J. B.,Zhang, X. W.,et al. Enhancement of conductivity and transmittance of zno films by post hydrogen plasma treatment[J]. Journal of applied physics,2009,105(8):6. |
| APA | Cai, P. F..,You, J. B..,Zhang, X. W..,Dong, J. J..,Yang, X. L..,...&Chen, N. F..(2009).Enhancement of conductivity and transmittance of zno films by post hydrogen plasma treatment.Journal of applied physics,105(8),6. |
| MLA | Cai, P. F.,et al."Enhancement of conductivity and transmittance of zno films by post hydrogen plasma treatment".Journal of applied physics 105.8(2009):6. |
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来源：半导体研究所
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