A new p-n structure ultraviolet photodetector with p(-)-gan active region
文献类型：期刊论文
| 作者 | Zhou Mei2; Zhao De-Gang1 |
| 刊名 | Acta physica sinica
 |
| 出版日期 | 2009-10-01 |
| 卷号 | 58期号:10页码:7255-7260 |
| 关键词 | P menus type gan Ultraviolet photodetector Quantum efficiency |
| ISSN号 | 1000-3290 |
| 通讯作者 | Zhao de-gang(dgzhao@red.semi.ac.cn) |
| 英文摘要 | A new ultraviolet photodetector of employing p menus type gan (p(-)-gan) as the active layer is proposed. it is easy to obtain the p(-)-gan layer with low carrier concentration. as a result, the depletion region can be increased and the quantum efficiency can be improved. the influence of some structure parameters on the performance of the new device is investigated. through the simulation calculation, it is found that the quantum efficiency increases with the decrease of the barrier height between the metal electrode and the p(-)-gan layer, and it is also found that the quantum efficiency can be improved by reducing the thickness of the p(-)-gan layer. to fabricate the new photodetector with high performance, we should employ thin p(-)-gan layer as the active layer and reduce the schottky barrier height. |
| WOS关键词 | GAN |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000270876900098 |
| 出版者 | CHINESE PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427612 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhao De-Gang |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 2.China Agr Univ, Coll Sci, Dept Appl Phys, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhou Mei,Zhao De-Gang. A new p-n structure ultraviolet photodetector with p(-)-gan active region[J]. Acta physica sinica,2009,58(10):7255-7260. |
| APA | Zhou Mei,&Zhao De-Gang.(2009).A new p-n structure ultraviolet photodetector with p(-)-gan active region.Acta physica sinica,58(10),7255-7260. |
| MLA | Zhou Mei,et al."A new p-n structure ultraviolet photodetector with p(-)-gan active region".Acta physica sinica 58.10(2009):7255-7260. |
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来源：半导体研究所
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