Gallium nitride nanowires doped with magnesium
文献类型：期刊论文
| 作者 | Zhang, Dongdong; Xue, Chengshan; Zhuang, Huizhao; Sun, Haibo; Cao, Yuping; Huang, Yinglong; Wang, Zouping; Wang, Ying; Guo, Yongfu |
| 刊名 | Materials letters
 |
| 出版日期 | 2009-05-15 |
| 卷号 | 63期号:12页码:978-981 |
| 关键词 | Crystal growth Nanomaterials Nanowires Mg-doped |
| ISSN号 | 0167-577X |
| DOI | 10.1016/j.matlet.2009.01.044 |
| 通讯作者 | Xue, chengshan(xuechengshan@sdnu.edu.cn) |
| 英文摘要 | Gan nanowires doped with mg have been synthesized on si (111) substrate through ammoniating ga(2)o(3) films doped with mg under flowing ammonia atmosphere. the mg-doped gan nanowires were characterized by x-ray diffraction (xrd). scanning electron microscope (sem), high-resolution transmission electron microscopy (hrtem) and photoluminescence (pl). the results demonstrate that the nanowires were single crystalline with hexagonal wurzite structure. the diameters of the nanowires ranged 20-30 nm and the lengths were about hundreds of micrometers. the intense pl peak at 359 nm showed a blueshift from the bulk band gap emission, attributed to burstein-moss effect. the growth mechanism of the crystalline gan nanowires is discussed briefly. (c) 2009 elsevier b.v. all rights reserved. |
| WOS关键词 | GAN NANOWIRES ; ZNO NANOWIRES ; GA2O3 FILMS ; PHOTOLUMINESCENCE ; FABRICATION |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000265152700006 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427622 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xue, Chengshan |
| 作者单位 | Shandong Normal Univ, Coll Phys & Elect, Inst Semicond, Jinan 250014, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, Dongdong,Xue, Chengshan,Zhuang, Huizhao,et al. Gallium nitride nanowires doped with magnesium[J]. Materials letters,2009,63(12):978-981. |
| APA | Zhang, Dongdong.,Xue, Chengshan.,Zhuang, Huizhao.,Sun, Haibo.,Cao, Yuping.,...&Guo, Yongfu.(2009).Gallium nitride nanowires doped with magnesium.Materials letters,63(12),978-981. |
| MLA | Zhang, Dongdong,et al."Gallium nitride nanowires doped with magnesium".Materials letters 63.12(2009):978-981. |
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来源：半导体研究所
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