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Design of shallow acceptors in zno through compensated donor-acceptor complexes: a density functional calculation

文献类型:期刊论文

作者Gai, Yanqin1; Li, Jingbo1; Li, Shu-Shen1; Xia, Jian-Bai1; Yan, Yanfa2; Wei, Su-Huai2
刊名Physical review b
出版日期2009-10-01
卷号80期号:15页码:4
ISSN号1098-0121
DOI10.1103/physrevb.80.153201
通讯作者Gai, yanqin()
英文摘要The intrinsic large electronegativity of o 2p character of the valence-band maximum (vbm) of zno renders it extremely difficult to be doped p type. we show from density functional calculation that such vbm characteristic can be altered by compensated donor-acceptor pairs, thus improve the p-type dopability. by incorporating (ti+c) or (zr+c) into zno simultaneously, a fully occupied impurity band that has the c 2p character is created above the vbm of host zno. subsequent doping by n in zno: (ti+c) and zno: (zr+c) lead to the acceptor ionization energies of 0.18 and 0.13 ev, respectively, which is about 200 mev lower than it is in pure zno.
WOS关键词INITIO MOLECULAR-DYNAMICS ; AUGMENTED-WAVE METHOD ; MG-DOPED GAN ; BEAM EPITAXY ; SEMICONDUCTORS ; METALS
WOS研究方向Physics
WOS类目Physics, Condensed Matter
语种英语
WOS记录号WOS:000271352000006
出版者AMER PHYSICAL SOC
URI标识http://www.irgrid.ac.cn/handle/1471x/2427623
专题半导体研究所
通讯作者Gai, Yanqin
作者单位1.Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China
2.Natl Renewable Energy Lab, Golden, CO 80401 USA
推荐引用方式
GB/T 7714
Gai, Yanqin,Li, Jingbo,Li, Shu-Shen,et al. Design of shallow acceptors in zno through compensated donor-acceptor complexes: a density functional calculation[J]. Physical review b,2009,80(15):4.
APA Gai, Yanqin,Li, Jingbo,Li, Shu-Shen,Xia, Jian-Bai,Yan, Yanfa,&Wei, Su-Huai.(2009).Design of shallow acceptors in zno through compensated donor-acceptor complexes: a density functional calculation.Physical review b,80(15),4.
MLA Gai, Yanqin,et al."Design of shallow acceptors in zno through compensated donor-acceptor complexes: a density functional calculation".Physical review b 80.15(2009):4.

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来源:半导体研究所

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