Decay lifetime and evolution of semiconductor quantum dots in photonic crystals
文献类型：期刊论文
| 作者 | Zhu, Zheng-Yong1; Li, Shu-Shen1,2 |
| 刊名 | Superlattices and microstructures
 |
| 出版日期 | 2009-02-01 |
| 卷号 | 45期号:2页码:65-72 |
| 关键词 | Photonic crystal Decay lifetime Quantum dots Rabbi oscillation |
| ISSN号 | 0749-6036 |
| DOI | 10.1016/j.spmi.2008.12.004 |
| 通讯作者 | Li, shu-shen(sslee@red.semi.ac.cn) |
| 英文摘要 | Spontaneous emission from gaas/algaas quantum dots (qds) embedded in photonic crystals with a narrow photonic band gap is studied theoretically. the results show that the decay lifetime is very sensitive to the sizes of qds, and both inhibited and accelerated emission can occur, which had been indicated in a previous experiment. the weisskopf-wigner approximation, good for atoms and molecules, may be incorrect for qds. a damped rabi oscillation of the excited state with the transition frequency outside the photonic band gap may appear, which is impossible for atoms and molecules. (c) 2008 elsevier ltd. all rights reserved. |
| WOS关键词 | SPONTANEOUS EMISSION ; BAND-GAP ; NANOCAVITY ; DYNAMICS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000263616500004 |
| 出版者 | ACADEMIC PRESS LTD ELSEVIER SCIENCE LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427633 |
| 专题 | 半导体研究所 |
| 通讯作者 | Li, Shu-Shen |
| 作者单位 | 1.Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China 2.AST, World Lab, Beijing 100080, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhu, Zheng-Yong,Li, Shu-Shen. Decay lifetime and evolution of semiconductor quantum dots in photonic crystals[J]. Superlattices and microstructures,2009,45(2):65-72. |
| APA | Zhu, Zheng-Yong,&Li, Shu-Shen.(2009).Decay lifetime and evolution of semiconductor quantum dots in photonic crystals.Superlattices and microstructures,45(2),65-72. |
| MLA | Zhu, Zheng-Yong,et al."Decay lifetime and evolution of semiconductor quantum dots in photonic crystals".Superlattices and microstructures 45.2(2009):65-72. |
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来源：半导体研究所
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