Gaas based inas/gasb superlattice short wavelength infrared detectors grown by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Tang Bao; Xu Ying-Qiang; Zhou Zhi-Qiang; Hao Rui-Ting; Wang Guo-Wei; Ren Zheng-Wei; Niu Zhi-Chuan |
| 刊名 | Chinese physics letters
 |
| 出版日期 | 2009-02-01 |
| 卷号 | 26期号:2页码:3 |
| ISSN号 | 0256-307X |
| 通讯作者 | Xu ying-qiang(yingqxu@semi.ac.cn) |
| 英文摘要 | Inas/gasb superlattice (sl) short wavelength infrared photoconduction detectors are grown by molecular beam epitaxy on gaas(001) semi-insulating substrates. an interfacial misfit mode alsb quantum dot layer and a thick gasb layer are grown as buffer layers. the detectors containing a 200-period 2ml/8ml inas/gasb sl active layer are fabricated with a pixel area of 800 x 800 mu m(2) without using passivation or antireflection coatings. corresponding to the 50% cutoff wavelengths of 2.05 mu m at 77k and 2.25 mu m at 300 k, the peak detectivities of the detectors are 4 x 10(9) cm.hz(1/2)/w at 77k and 2 x 10(8) cm.hz(1/2)/w at 300 k, respectively. |
| WOS关键词 | INAS/GA1-XINXSB SUPERLATTICE ; GASB ; HETEROJUNCTIONS ; PHOTODIODES ; SEGREGATION ; LAYERS ; INAS ; ALSB |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| 出版者 | IOP PUBLISHING LTD |
| WOS记录号 | WOS:000263243800073 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427639 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xu Ying-Qiang |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Tang Bao,Xu Ying-Qiang,Zhou Zhi-Qiang,et al. Gaas based inas/gasb superlattice short wavelength infrared detectors grown by molecular beam epitaxy[J]. Chinese physics letters,2009,26(2):3. |
| APA | Tang Bao.,Xu Ying-Qiang.,Zhou Zhi-Qiang.,Hao Rui-Ting.,Wang Guo-Wei.,...&Niu Zhi-Chuan.(2009).Gaas based inas/gasb superlattice short wavelength infrared detectors grown by molecular beam epitaxy.Chinese physics letters,26(2),3. |
| MLA | Tang Bao,et al."Gaas based inas/gasb superlattice short wavelength infrared detectors grown by molecular beam epitaxy".Chinese physics letters 26.2(2009):3. |
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来源：半导体研究所
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