Growth and characterization of gainnas by molecular beam epitaxy using a nitrogen irradiation method
文献类型：期刊论文
| 作者 | Zhao, H.1,4; Wang, S. M.1; Zhao, Q. X.2; Sadeghi, M.3; Larsson, A.1 |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2009-03-15 |
| 卷号 | 311期号:7页码:1723-1727 |
| 关键词 | Quantum well Dilute nitride Rapid thermal annealing Ingaas Gainnas |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2008.11.070 |
| 通讯作者 | Zhao, h.(zhaohuan@red.semi.ac.cn) |
| 英文摘要 | We propose an innovative technique, making use of the in segregation effect, referred as the n irradiation method, to enhance in-n bonding and extend the emission wavelength of gainnas quantum wells (qws). after the formation of a complete in floating layer, the growth is interrupted and n irradiation is initiated. the majority of n atoms are forced to bond with in atoms and their incorporation is regulated independently by the n exposure time and the as pressure. the effect of the n exposure time and as pressure on the n incorporation and the optical quality of gainnas qws were investigated. anomalous photoluminescence (pl) wavelength red shifts after rapid thermal annealing (rta) were observed in the n-irradiated samples, whereas a normal gainnas sample revealed a blue shift. this method provides an alternative way to extend the emission wavelength of gainnas qws with decent optical quality. we demonstrate light emission at 1546 nm from an 11-nm-thick qw, using this method and the pl intensity is similar to that of a 7-nm-thick gainnas qw grown at a reduced rate. (c) 2008 elsevier b.v. all rights reserved. |
| WOS关键词 | QUANTUM-WELL LASERS ; THRESHOLD CURRENT-DENSITY ; SURFACE SEGREGATION ; CARRIER LOCALIZATION ; PHOTOLUMINESCENCE ; RECOMBINATION ; MECHANISMS ; POSTGROWTH ; GANXAS1-X ; ORIGIN |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000265659300024 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427643 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhao, H. |
| 作者单位 | 1.Chalmers, Photon Lab, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden 2.Linkoping Univ, Inst Sci & Technol, SE-60174 Norrkoping, Sweden 3.Chalmers, Nanofabricat Lab, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden 4.Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao, H.,Wang, S. M.,Zhao, Q. X.,et al. Growth and characterization of gainnas by molecular beam epitaxy using a nitrogen irradiation method[J]. Journal of crystal growth,2009,311(7):1723-1727. |
| APA | Zhao, H.,Wang, S. M.,Zhao, Q. X.,Sadeghi, M.,&Larsson, A..(2009).Growth and characterization of gainnas by molecular beam epitaxy using a nitrogen irradiation method.Journal of crystal growth,311(7),1723-1727. |
| MLA | Zhao, H.,et al."Growth and characterization of gainnas by molecular beam epitaxy using a nitrogen irradiation method".Journal of crystal growth 311.7(2009):1723-1727. |
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来源：半导体研究所
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