High-performance evanescently-coupled uni-traveling-carrier photodiodes
文献类型：期刊论文
| 作者 | Zhang Yun-Xiao; Liao Zai-Yi; Wang Wei |
| 刊名 | Chinese physics b
 |
| 出版日期 | 2009-06-01 |
| 卷号 | 18期号:6页码:2393-2397 |
| 关键词 | Evanescently-coupled uni-traveling-carrier photodiode Multimode diluted waveguide Beam propagation method 1-db compression current |
| ISSN号 | 1674-1056 |
| 通讯作者 | Zhang yun-xiao(zhangyx@semi.ac.cn) |
| 英文摘要 | A new evanescently-coupled uni-traveling-carrier photodiode (ec-utc pd) based on a multimode diluted waveguide (mdw) structure is fabricated, analysed and characterized. optical and electrical characteristics of the device are investigated. the excellent characteristics are demonstrated such as a responsivity of 0.36 a/w, a bandwidth of 11.5 ghz and a small-signal 1-db compression current greater than 18 ma at 10 ghz. the saturation current is significantly improved compared with those of similar evanescently-coupled pin photodiodes. the radio frequency (rf) bandwidth can be further improved by eliminating rf losses induced by the cables, the probe and the bias tee between the photodiode and the spectrum analyzer. |
| WOS关键词 | WAVE-GUIDE ; 1.55-MU-M WAVELENGTH ; HIGH-RESPONSIVITY ; PHOTODETECTOR ; BANDWIDTH ; DESIGN |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000266577300046 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427651 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang Yun-Xiao |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang Yun-Xiao,Liao Zai-Yi,Wang Wei. High-performance evanescently-coupled uni-traveling-carrier photodiodes[J]. Chinese physics b,2009,18(6):2393-2397. |
| APA | Zhang Yun-Xiao,Liao Zai-Yi,&Wang Wei.(2009).High-performance evanescently-coupled uni-traveling-carrier photodiodes.Chinese physics b,18(6),2393-2397. |
| MLA | Zhang Yun-Xiao,et al."High-performance evanescently-coupled uni-traveling-carrier photodiodes".Chinese physics b 18.6(2009):2393-2397. |
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来源：半导体研究所
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