Properties of alyga1-yn/alxga1-xn/aln/gan double-barrier high electron mobility transistor structure
文献类型：期刊论文
| 作者 | Guo Lun-Chun; Wang Xiao-Liang; Xiao Hong-Ling; Ran Jun-Xue; Wang Cui-Mei; Ma Zhi-Yong; Luo Wei-Jun; Wang Zhan-Guo |
| 刊名 | Chinese physics letters
 |
| 出版日期 | 2009 |
| 卷号 | 26期号:1页码:4 |
| ISSN号 | 0256-307X |
| 通讯作者 | Guo lun-chun(lcguo@semi.ac.cn) |
| 英文摘要 | Electrical properties of alyga1-yn/alxga1-xn/aln/gan structure are investigated by solving coupled schrodinger and poisson equation self-consistently. our calculations show that the two-dimensional electron gas (2deg) density will decrease with the thickness of the second barrier (alyga1-yn) once the aln content of the second barrier is smaller than a critical value y(c), and will increase with the thickness of the second barrier (alyga1-yn) when the critical aln content of the second barrier y(c) is exceeded. our calculations also show that the critical aln content of the second barrier y(c) will increase with the aln content and the thickness of the first barrier layer (alxga1-xn). |
| WOS关键词 | CONTENT ALGAN/GAN HETEROSTRUCTURES ; CHEMICAL-VAPOR-DEPOSITION ; FIELD-EFFECT TRANSISTORS ; AL-CONTENT ; ALGAN/ALN/GAN HETEROSTRUCTURES ; HEMT STRUCTURES ; PHASE EPITAXY ; SAPPHIRE ; GAS ; DENSITIES |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| 出版者 | IOP PUBLISHING LTD |
| WOS记录号 | WOS:000262866100077 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427653 |
| 专题 | 半导体研究所 |
| 通讯作者 | Guo Lun-Chun |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Guo Lun-Chun,Wang Xiao-Liang,Xiao Hong-Ling,et al. Properties of alyga1-yn/alxga1-xn/aln/gan double-barrier high electron mobility transistor structure[J]. Chinese physics letters,2009,26(1):4. |
| APA | Guo Lun-Chun.,Wang Xiao-Liang.,Xiao Hong-Ling.,Ran Jun-Xue.,Wang Cui-Mei.,...&Wang Zhan-Guo.(2009).Properties of alyga1-yn/alxga1-xn/aln/gan double-barrier high electron mobility transistor structure.Chinese physics letters,26(1),4. |
| MLA | Guo Lun-Chun,et al."Properties of alyga1-yn/alxga1-xn/aln/gan double-barrier high electron mobility transistor structure".Chinese physics letters 26.1(2009):4. |
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来源：半导体研究所
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