中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Characteristic analysis of the optical delay in frequency response of resonant cavity enhanced (rce) photodetectors

文献类型:期刊论文

作者Guo Jian-Chuan; Zuo Yu-Hua; Zhang Yun; Ding Wu-Chang; Cheng Bu-Wen; Yu Jin-Zhong; Wang Qi-Ming
刊名Chinese physics b
出版日期2009-06-01
卷号18期号:6页码:2223-2228
关键词Electrical bandwidth Frequency response Optical delay Photodetectors
ISSN号1674-1056
通讯作者Guo jian-chuan(jchguo@semi.ac.cn)
英文摘要With consideration of the modulation frequency of the input lightwave itself, we present a new model to calculate the quantum efficiency of rce p-i-n photodetectors (pd) by superimposition of multiple reflected lightwaves. for the first time, the optical delay, another important factor limiting the electrical bandwidth of rce p-i-n pd excluding the transit time of the carriers and rc(d) response of the photodetector, is analyzed and discussed in detail. the optical delay dominates the bandwidth of rce p-i-n pd when its active layer is thinner than several 10 nm. these three limiting factors must be considered exactly for design of ultra-high-speed rce p-i-n pd.
WOS研究方向Physics
WOS类目Physics, Multidisciplinary
语种英语
WOS记录号WOS:000266577300020
出版者IOP PUBLISHING LTD
URI标识http://www.irgrid.ac.cn/handle/1471x/2427663
专题半导体研究所
通讯作者Guo Jian-Chuan
作者单位Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Guo Jian-Chuan,Zuo Yu-Hua,Zhang Yun,et al. Characteristic analysis of the optical delay in frequency response of resonant cavity enhanced (rce) photodetectors[J]. Chinese physics b,2009,18(6):2223-2228.
APA Guo Jian-Chuan.,Zuo Yu-Hua.,Zhang Yun.,Ding Wu-Chang.,Cheng Bu-Wen.,...&Wang Qi-Ming.(2009).Characteristic analysis of the optical delay in frequency response of resonant cavity enhanced (rce) photodetectors.Chinese physics b,18(6),2223-2228.
MLA Guo Jian-Chuan,et al."Characteristic analysis of the optical delay in frequency response of resonant cavity enhanced (rce) photodetectors".Chinese physics b 18.6(2009):2223-2228.

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来源:半导体研究所

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