中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Synthesis of large-scale gan nanowires by ammoniating ga2o3/v films

文献类型:期刊论文

作者Yang Zhaozhu; Xue Chengahan; Zhuang Huizhao; Wang Gongtang; Chen Jinhua; Li Hong; Qin Lixia; Wang Zouping
刊名Rare metal materials and engineering
出版日期2009-03-01
卷号38期号:3页码:377-379
ISSN号1002-185X
关键词Magnetron sputtering Gan Nanowires Photoluminescence
通讯作者Xue chengahan(xuechengshan@sdnu.edu.en)
英文摘要Large-scale gan nanowires were synthesized on si(111) substrates through ammoniating ga2o3/v films. the as-grown products were characterized by x-ray diffraction (xrd), scanning electron microscopy (sem) and transmission electron microscopy (tem). the results reveal that the grown gan nanowires have a smooth and clean surface with diameters ranging from 20 nm to 60 nm and lengths of about several tens of micrometers. the results of hrtem and selected-area electron diffraction (saed) show that the nanowires are pure hexagonal gan single crystal. the photoluminescence (pl) spectrum indicates that the gan nanowires have good emission property. the growth mechanism is discussed briefly.
WOS关键词GALLIUM NITRIDE NANOWIRES ; LIGHT-EMITTING-DIODES ; CATALYTIC GROWTH
WOS研究方向Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
语种英语
出版者NORTHWEST INST NONFERROUS METAL RESEARCH
WOS记录号WOS:000265112900001
URI标识http://www.irgrid.ac.cn/handle/1471x/2427672
专题半导体研究所
通讯作者Xue Chengahan
作者单位Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China
推荐引用方式
GB/T 7714
Yang Zhaozhu,Xue Chengahan,Zhuang Huizhao,et al. Synthesis of large-scale gan nanowires by ammoniating ga2o3/v films[J]. Rare metal materials and engineering,2009,38(3):377-379.
APA Yang Zhaozhu.,Xue Chengahan.,Zhuang Huizhao.,Wang Gongtang.,Chen Jinhua.,...&Wang Zouping.(2009).Synthesis of large-scale gan nanowires by ammoniating ga2o3/v films.Rare metal materials and engineering,38(3),377-379.
MLA Yang Zhaozhu,et al."Synthesis of large-scale gan nanowires by ammoniating ga2o3/v films".Rare metal materials and engineering 38.3(2009):377-379.

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来源:半导体研究所

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