Fine structural splitting and exciton spin relaxation in single inas quantum dots
文献类型：期刊论文
| 作者 | Dou, X. M.; Sun, B. Q.; Xiong, Y. H.; Niu, Z. C.; Ni, H. Q.; Xu, Z. Y. |
| 刊名 | Journal of applied physics
 |
| 出版日期 | 2009-05-15 |
| 卷号 | 105期号:10页码:4 |
| 关键词 | Deformation Excitons Fine structure Iii-v semiconductors Indium compounds Phonons Photoluminescence Semiconductor quantum dots Spin dynamics |
| ISSN号 | 0021-8979 |
| DOI | 10.1063/1.3131700 |
| 通讯作者 | Dou, x. m.() |
| 英文摘要 | We have studied the exciton spin dynamics in single inas quantum dots (qds) with different exciton fine structural splitting (fss) by transient luminescence measurements. we have established the correlation between exciton spin relaxation rate and the energy splitting of the fss when fss is nonzero and found that the spin relaxation rate in qd increases with a slope of 8.8x10(-4) ns(-1) mu ev(-1). theoretical analyses based on the phonon-assisted relaxations via the deformation potential give a reasonable interpretation of the experimental results. |
| WOS关键词 | ELECTRON |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000266500100085 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427674 |
| 专题 | 半导体研究所 |
| 通讯作者 | Dou, X. M. |
| 作者单位 | CAS, SKLSM, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Dou, X. M.,Sun, B. Q.,Xiong, Y. H.,et al. Fine structural splitting and exciton spin relaxation in single inas quantum dots[J]. Journal of applied physics,2009,105(10):4. |
| APA | Dou, X. M.,Sun, B. Q.,Xiong, Y. H.,Niu, Z. C.,Ni, H. Q.,&Xu, Z. Y..(2009).Fine structural splitting and exciton spin relaxation in single inas quantum dots.Journal of applied physics,105(10),4. |
| MLA | Dou, X. M.,et al."Fine structural splitting and exciton spin relaxation in single inas quantum dots".Journal of applied physics 105.10(2009):4. |
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来源：半导体研究所
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