中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Influence of mg doping on gan nanowires

文献类型:期刊论文

作者Zhang, Dongdong; Xue, Chengshan; Zhuang, Huizhao; Sun, Haibo; Cao, Yuping; Huang, Yinglong; Wang, Zouping; Wang, Ying
刊名Chemphyschem
出版日期2009-02-23
卷号10期号:3页码:571-575
关键词Crystal growth Luminescence Nanostructures Nitrides Semiconductor
ISSN号1439-4235
DOI10.1002/cphc.200800529
通讯作者Zhang, dongdong(dong_dong5870@163.com)
英文摘要Magnesium-doped gan nonowires with different dopant concentrations are synthesized by ammoniating ga(2)o(3)-thin films doped with mg at 900 degrees c scanning electron microscopy (sem), x-ray diffraction (xrd), energy-dispersive x-ray spectroscopy (edx); high-resolution transmission electron microscopy (hrtem); and room-temperature photoluminescence (pl) are employed to characterize the influences on the morphology, structure, crystallinity, and optical properties of mg-doped gan nanowires. the results demonstrate that the nanowires are single-crystalline with hexagonal wurtzite structure. gan nanowires doped with 5 atom% of mg have the best morphology and crystallinity with a single-crystalline structure, and at this composition the pl spectrum with the strongest uv peak is observed. the growth mechanism of crystalline gan nanowires is discussed briefly.
WOS关键词LIGHT-EMITTING-DIODES ; PHOTOLUMINESCENCE ; FABRICATION ; GROWTH ; BLUE
WOS研究方向Chemistry ; Physics
WOS类目Chemistry, Physical ; Physics, Atomic, Molecular & Chemical
语种英语
WOS记录号WOS:000264229900018
出版者WILEY-V C H VERLAG GMBH
URI标识http://www.irgrid.ac.cn/handle/1471x/2427675
专题半导体研究所
通讯作者Zhang, Dongdong
作者单位Shandong Normal Univ, Coll Phys & Elect, Inst Semicond, Jinan 250014, Peoples R China
推荐引用方式
GB/T 7714
Zhang, Dongdong,Xue, Chengshan,Zhuang, Huizhao,et al. Influence of mg doping on gan nanowires[J]. Chemphyschem,2009,10(3):571-575.
APA Zhang, Dongdong.,Xue, Chengshan.,Zhuang, Huizhao.,Sun, Haibo.,Cao, Yuping.,...&Wang, Ying.(2009).Influence of mg doping on gan nanowires.Chemphyschem,10(3),571-575.
MLA Zhang, Dongdong,et al."Influence of mg doping on gan nanowires".Chemphyschem 10.3(2009):571-575.

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来源:半导体研究所

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