中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Design of plasmonic back structures for efficiency enhancement of thin-film amorphous si solar cells

文献类型:期刊论文

作者Bai, Wenli1,2,3; Gan, Qiaoqiang3; Bartoli, Filbert3; Zhang, Jing1,2; Cai, Likang1,2; Huang, Yidong4; Song, Guofeng1
刊名Optics letters
出版日期2009-12-01
卷号34期号:23页码:3725-3727
ISSN号0146-9592
通讯作者Song, guofeng(sgf@semi.ac.cn)
英文摘要Metallic back structures with one-dimensional periodic nanoridges attached to a thin-film amorphous si (a-si) solar cell are numerically studied. at the interfaces between a-si and metal materials, the excitation of surface-plasmon polaritons leads to obvious absorption enhancements in a wide near-ir range for different ridge shapes and periods. the highest enhancement factor of the cell external quantum efficiency is estimated to be 3.32. the optimized structure can achieve an increase of 17.12% in the cell efficiency. (c) 2009 optical society of america
WOS关键词GRATING STRUCTURES
WOS研究方向Optics
WOS类目Optics
语种英语
WOS记录号WOS:000272275300044
出版者OPTICAL SOC AMER
URI标识http://www.irgrid.ac.cn/handle/1471x/2427684
专题半导体研究所
通讯作者Song, Guofeng
作者单位1.Chinese Acad Sci, Inst Semicond, Nanooptoelect Lab, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Grad Univ, Beijing 100190, Peoples R China
3.Lehigh Univ, Dept Elect & Comp Engn, Bethlehem, PA 18015 USA
4.Tsinghua Univ, Dept Elect Engn, State Key Lab Integrated Optoelect, Beijing 100084, Peoples R China
推荐引用方式
GB/T 7714
Bai, Wenli,Gan, Qiaoqiang,Bartoli, Filbert,et al. Design of plasmonic back structures for efficiency enhancement of thin-film amorphous si solar cells[J]. Optics letters,2009,34(23):3725-3727.
APA Bai, Wenli.,Gan, Qiaoqiang.,Bartoli, Filbert.,Zhang, Jing.,Cai, Likang.,...&Song, Guofeng.(2009).Design of plasmonic back structures for efficiency enhancement of thin-film amorphous si solar cells.Optics letters,34(23),3725-3727.
MLA Bai, Wenli,et al."Design of plasmonic back structures for efficiency enhancement of thin-film amorphous si solar cells".Optics letters 34.23(2009):3725-3727.

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来源:半导体研究所

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