Single mode vertical-cavity surface emitting laser with surface plasmon nanostructure
文献类型:期刊论文
作者 | Song Guo-Feng; Zhang Yu; Guo Bao-Shan; Wang Wei-Min |
刊名 | Acta physica sinica
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出版日期 | 2009-10-01 |
卷号 | 58期号:10页码:7278-7281 |
关键词 | Surface plasmons Vertical-cavity surface-emitting laser Mode selection |
ISSN号 | 1000-3290 |
通讯作者 | Song guo-feng(sgf@semi.ac.cn) |
英文摘要 | The vertical-cavity surface-emitting laser(vcsel) has proved to be a low cost light source with attractive properties such as surface emission, circular and low divergence output beam, and simple integration in two-dimensional array. many new applications such as in spectroscopy, optical storage, short distance fiber optic interconnects, and in longer distance communication, are continuously arising. many of these applications require stable and single-mode high output power. several methods that affect the transverse guiding and/or introduce mode selective loss or gain have been developed. in this study, a method for improving the single mode output power by using metal surface plasmons nanostructure is proposed. theoretical calculation shows that the outpout power is improved about 50% compared to the result of standard vcsels. |
WOS研究方向 | Physics |
WOS类目 | Physics, Multidisciplinary |
语种 | 英语 |
WOS记录号 | WOS:000270876900102 |
出版者 | CHINESE PHYSICAL SOC |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427692 |
专题 | 半导体研究所 |
通讯作者 | Song Guo-Feng |
作者单位 | Chinese Acad Sci, Inst Semicond, Lab Nanooptoelect, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Song Guo-Feng,Zhang Yu,Guo Bao-Shan,et al. Single mode vertical-cavity surface emitting laser with surface plasmon nanostructure[J]. Acta physica sinica,2009,58(10):7278-7281. |
APA | Song Guo-Feng,Zhang Yu,Guo Bao-Shan,&Wang Wei-Min.(2009).Single mode vertical-cavity surface emitting laser with surface plasmon nanostructure.Acta physica sinica,58(10),7278-7281. |
MLA | Song Guo-Feng,et al."Single mode vertical-cavity surface emitting laser with surface plasmon nanostructure".Acta physica sinica 58.10(2009):7278-7281. |
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来源:半导体研究所
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