中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Single mode vertical-cavity surface emitting laser with surface plasmon nanostructure

文献类型:期刊论文

作者Song Guo-Feng; Zhang Yu; Guo Bao-Shan; Wang Wei-Min
刊名Acta physica sinica
出版日期2009-10-01
卷号58期号:10页码:7278-7281
关键词Surface plasmons Vertical-cavity surface-emitting laser Mode selection
ISSN号1000-3290
通讯作者Song guo-feng(sgf@semi.ac.cn)
英文摘要The vertical-cavity surface-emitting laser(vcsel) has proved to be a low cost light source with attractive properties such as surface emission, circular and low divergence output beam, and simple integration in two-dimensional array. many new applications such as in spectroscopy, optical storage, short distance fiber optic interconnects, and in longer distance communication, are continuously arising. many of these applications require stable and single-mode high output power. several methods that affect the transverse guiding and/or introduce mode selective loss or gain have been developed. in this study, a method for improving the single mode output power by using metal surface plasmons nanostructure is proposed. theoretical calculation shows that the outpout power is improved about 50% compared to the result of standard vcsels.
WOS研究方向Physics
WOS类目Physics, Multidisciplinary
语种英语
WOS记录号WOS:000270876900102
出版者CHINESE PHYSICAL SOC
URI标识http://www.irgrid.ac.cn/handle/1471x/2427692
专题半导体研究所
通讯作者Song Guo-Feng
作者单位Chinese Acad Sci, Inst Semicond, Lab Nanooptoelect, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Song Guo-Feng,Zhang Yu,Guo Bao-Shan,et al. Single mode vertical-cavity surface emitting laser with surface plasmon nanostructure[J]. Acta physica sinica,2009,58(10):7278-7281.
APA Song Guo-Feng,Zhang Yu,Guo Bao-Shan,&Wang Wei-Min.(2009).Single mode vertical-cavity surface emitting laser with surface plasmon nanostructure.Acta physica sinica,58(10),7278-7281.
MLA Song Guo-Feng,et al."Single mode vertical-cavity surface emitting laser with surface plasmon nanostructure".Acta physica sinica 58.10(2009):7278-7281.

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来源:半导体研究所

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