Top-emission si-based phosphor organic light emitting diode with au doped ultrathin n-si film anode and bottom al mirror
文献类型：期刊论文
| 作者 | Li, Y. Z.1; Xu, W. J.1; Ran, G. Z.1; Qin, G. G.1,2 |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2009-07-20 |
| 卷号 | 95期号:3页码:3 |
| 关键词 | Aluminium Crystallisation Diffusion Elemental semiconductors Gold Organic light emitting diodes Phosphors Semiconductor thin films Silicon Sputter deposition |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.3186040 |
| 通讯作者 | Qin, g. g.(qingg@pku.edu.cn) |
| 英文摘要 | We report a highly efficient top-emission si-based phosphor organic light emitting diode (pholed) with an ultrathin polycrystalline n-si:au film anode and a bottom al mirror. this anode is formed by magnetron sputtering followed by ni induced crystallization and then au diffusion. by optimizing the thickness of the n-si:au film anode, the au diffusion temperature, and the other parameters of the pholed, the highest current and power efficiencies of the n-si:au film anode pholed reached 85 +/- 9 cd/a and 80 +/- 8 lm/w, respectively, corresponding to an external quantum efficiency of 21 +/- 2% and a power conversion efficiency of 15 +/- 2%, respectively, which are about 60% and 110% higher than those of the indium tin oxide anode counterpart and 70% and 50% higher than those of the bulk n(+)-si:au anode counterpart, respectively. |
| WOS关键词 | 1.5 MU-M ; SILICON ANODE ; EFFICIENCY ; CRYSTALLIZATION ; FABRICATION ; WAVELENGTH ; DEVICES |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000268405300076 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427695 |
| 专题 | 半导体研究所 |
| 通讯作者 | Qin, G. G. |
| 作者单位 | 1.Peking Univ, State Key Lab Mesoscop Phys, Sch Phys, Beijing 100871, Peoples R China 2.Chinese Acad Sci, Key Lab Semicond Mat, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, Y. Z.,Xu, W. J.,Ran, G. Z.,et al. Top-emission si-based phosphor organic light emitting diode with au doped ultrathin n-si film anode and bottom al mirror[J]. Applied physics letters,2009,95(3):3. |
| APA | Li, Y. Z.,Xu, W. J.,Ran, G. Z.,&Qin, G. G..(2009).Top-emission si-based phosphor organic light emitting diode with au doped ultrathin n-si film anode and bottom al mirror.Applied physics letters,95(3),3. |
| MLA | Li, Y. Z.,et al."Top-emission si-based phosphor organic light emitting diode with au doped ultrathin n-si film anode and bottom al mirror".Applied physics letters 95.3(2009):3. |
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来源：半导体研究所
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