Effect of beta-irradiation on photoluminescence of mocvd grown gan
文献类型：期刊论文
| 作者 | Majid, Abdul1; Israr, M.1; Zhu, Jianjun2; Ali, Akbar1 |
| 刊名 | Journal of materials science-materials in electronics
 |
| 出版日期 | 2009 |
| 卷号 | 20期号:1页码:14-16 |
| ISSN号 | 0957-4522 |
| DOI | 10.1007/s10854-008-9587-3 |
| 通讯作者 | Ali, akbar(akbar@qau.edu.pk) |
| 英文摘要 | The effect of beta particles interaction on the optical properties of mocvd grown gan is reported. a significant change in luminescence properties of gan is observed after exposing the material with 0.6 mev beta particles with low dose of 10(12) cm(-2). the results obtained from photoluminescence measurements of irradiated gan samples in low dose are found contradictory to those reported in literature for samples irradiated with heavy dose (> 10(15) cm(-2)) of electron. an increase in intensity of yellow luminescence has been observed with increasing dose of beta particles which is in disagreement to the already reported results in literature for heavily irradiated samples. a model has been proposed to sort out this inconsistency. the increase in yl intensity at low dose is attributed to the increase in concentration of v(ga)o(n) complex whereas production of non-radiative v(ga)o(n) clusters is assumed to justify the decrease in yl intensity at high dose. |
| WOS关键词 | ELECTRON-IRRADIATION ; GALLIUM NITRIDE ; THIN-FILMS |
| WOS研究方向 | Engineering ; Materials Science ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000261970500003 |
| 出版者 | SPRINGER |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427697 |
| 专题 | 半导体研究所 |
| 通讯作者 | Ali, Akbar |
| 作者单位 | 1.Quaid I Azam Univ, Dept Phys, Adv Mat Phys Lab, Islamabad, Pakistan 2.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Majid, Abdul,Israr, M.,Zhu, Jianjun,et al. Effect of beta-irradiation on photoluminescence of mocvd grown gan[J]. Journal of materials science-materials in electronics,2009,20(1):14-16. |
| APA | Majid, Abdul,Israr, M.,Zhu, Jianjun,&Ali, Akbar.(2009).Effect of beta-irradiation on photoluminescence of mocvd grown gan.Journal of materials science-materials in electronics,20(1),14-16. |
| MLA | Majid, Abdul,et al."Effect of beta-irradiation on photoluminescence of mocvd grown gan".Journal of materials science-materials in electronics 20.1(2009):14-16. |
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来源：半导体研究所
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