Lattice polarity detection of inn by circular photogalvanic effect
文献类型：期刊论文
| 作者 | Zhang, Q.1; Wang, X. Q.1; He, X. W.1; Yin, C. M.1; Xu, F. J.1; Shen, B.1; Chen, Y. H.3; Wang, Z. G.3; Ishitani, Y.2; Yoshikawa, A.2 |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2009-07-20 |
| 卷号 | 95期号:3页码:3 |
| 关键词 | Iii-v semiconductors Indium compounds Nondestructive testing Photoconductivity Radiation effects Semiconductor thin films Wide band gap semiconductors |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.3186042 |
| 通讯作者 | Zhang, q.() |
| 英文摘要 | We report an effective and nondestructive method based on circular photogalvanic effect (cpge) to detect the lattice polarity of inn. because of the lattice inversion between in- and n-polar inn, the energy band spin splitting is opposite for inn films with different polarities. consequently under light irradiation with the same helicity, cpge photocurrents in in- and n-polar layers will have opposite directions, thus the polarity can be detected. this method is demonstrated by our cpge measurements in both n- and p-type inn films. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; QUANTUM-WELLS ; BAND ; GROWTH ; SPIN |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000268405300015 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427706 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, Q. |
| 作者单位 | 1.Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China 2.Chiba Univ, Dept Elect & Elect Engn, Inage Ku, Chiba 2638522, Japan 3.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, Q.,Wang, X. Q.,He, X. W.,et al. Lattice polarity detection of inn by circular photogalvanic effect[J]. Applied physics letters,2009,95(3):3. |
| APA | Zhang, Q..,Wang, X. Q..,He, X. W..,Yin, C. M..,Xu, F. J..,...&Yoshikawa, A..(2009).Lattice polarity detection of inn by circular photogalvanic effect.Applied physics letters,95(3),3. |
| MLA | Zhang, Q.,et al."Lattice polarity detection of inn by circular photogalvanic effect".Applied physics letters 95.3(2009):3. |
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来源：半导体研究所
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