Enhancement of exciton-phonon interaction in ingan quantum wells induced by electron-beam irradiation
文献类型：期刊论文
| 作者 | Ding, Kai1,2; Zeng, Yiping1,2; Duan, Ruifei2; Wei, Xuecheng2; Wang, Junxi2; Ma, Ping2; Lu, Hongxi2; Cong, Peipei2; Li, Jinmin1,2 |
| 刊名 | Japanese journal of applied physics
 |
| 出版日期 | 2009-02-01 |
| 卷号 | 48期号:2页码:3 |
| ISSN号 | 0021-4922 |
| DOI | 10.1143/jjap.48.021001 |
| 通讯作者 | Ding, kai(dingkai@red.semi.ac.cn) |
| 英文摘要 | Ingan/gan multiple quantum wells grown by metal-organic chemical vapor deposition were irradiated with the electron beam from a low energy accelerator. the electron irradiation induced a redshift by 50 mev in the photoluminescence spectra of the electron-irradiated ingan/gan quantum wells, irrespective of the exposure time to the electron beam which ranges from 10 to 1000s. the localization parameter extracted from the temperature-dependent photoluminescence spectra was found to increase in the irradiated samples. analysis of the intensity of the longitudinal optical phonon sidebands showed the enhancement of the exciton-phonon coupling, indicating that the excitons are more strongly localized in the irradiated ingan wells. the change in the pholotuminescence spectra. in the irradiated inga/gan quantum wells were explained in terms of the increase of indium concentration in indium rich clusters induced by the electron irradiation (c) 2009 the japan society of applied physics |
| WOS关键词 | LOCALIZATION ; SEMICONDUCTORS ; EMISSION ; BOXES ; BAND |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000264955900027 |
| 出版者 | JAPAN SOCIETY APPLIED PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427712 |
| 专题 | 半导体研究所 |
| 通讯作者 | Ding, Kai |
| 作者单位 | 1.Chinese Acad Sci, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Novel Mat Ctr, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ding, Kai,Zeng, Yiping,Duan, Ruifei,et al. Enhancement of exciton-phonon interaction in ingan quantum wells induced by electron-beam irradiation[J]. Japanese journal of applied physics,2009,48(2):3. |
| APA | Ding, Kai.,Zeng, Yiping.,Duan, Ruifei.,Wei, Xuecheng.,Wang, Junxi.,...&Li, Jinmin.(2009).Enhancement of exciton-phonon interaction in ingan quantum wells induced by electron-beam irradiation.Japanese journal of applied physics,48(2),3. |
| MLA | Ding, Kai,et al."Enhancement of exciton-phonon interaction in ingan quantum wells induced by electron-beam irradiation".Japanese journal of applied physics 48.2(2009):3. |
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来源：半导体研究所
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