A wide-narrow well design for understanding the efficiency droop in ingan/gan light-emitting diodes
文献类型：期刊论文
| 作者 | Ding, K.1,2; Zeng, Y. P.1,2,3; Wei, X. C.2; Li, Z. C.3; Wang, J. X.3; Lu, H. X.3; Cong, P. P.3; Yi, X. Y.3; Wang, G. H.3; Li, J. M.1,2,3 |
| 刊名 | Applied physics b-lasers and optics
 |
| 出版日期 | 2009-10-01 |
| 卷号 | 97期号:2页码:465-468 |
| ISSN号 | 0946-2171 |
| DOI | 10.1007/s00340-009-3657-y |
| 通讯作者 | Ding, k.(dingkai@red.semi.ac.cn) |
| 英文摘要 | The electroluminescence efficiency at room temperature and low temperature (15 k) in a wide-narrow-well ingan/gan light-emitting diode with a narrow last well (1.5 nm) and a narrow next-to-last barrier (5 nm) is investigated to study the efficiency droop phenomenon. a reduced droop in the wide wells and a reduced droop at low temperatures reveals that inferior hole transportation ability induced auger recombination is the root for the droop at high excitation levels. |
| WOS研究方向 | Optics ; Physics |
| WOS类目 | Optics ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000271089300031 |
| 出版者 | SPRINGER |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427717 |
| 专题 | 半导体研究所 |
| 通讯作者 | Ding, K. |
| 作者单位 | 1.Chinese Acad Sci, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Novel Mat Ctr, Inst Semicond, Beijing 100083, Peoples R China 3.Chinese Acad Sci, Res & Dev Ctr Semicond Lighting, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ding, K.,Zeng, Y. P.,Wei, X. C.,et al. A wide-narrow well design for understanding the efficiency droop in ingan/gan light-emitting diodes[J]. Applied physics b-lasers and optics,2009,97(2):465-468. |
| APA | Ding, K..,Zeng, Y. P..,Wei, X. C..,Li, Z. C..,Wang, J. X..,...&Li, J. M..(2009).A wide-narrow well design for understanding the efficiency droop in ingan/gan light-emitting diodes.Applied physics b-lasers and optics,97(2),465-468. |
| MLA | Ding, K.,et al."A wide-narrow well design for understanding the efficiency droop in ingan/gan light-emitting diodes".Applied physics b-lasers and optics 97.2(2009):465-468. |
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来源：半导体研究所
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