Determination of mgo/aln heterojunction band offsets by x-ray photoelectron spectroscopy
文献类型：期刊论文
| 作者 | Yang, A. L.; Song, H. P.; Liu, X. L.; Wei, H. Y.; Guo, Y.; Zheng, G. L.; Jiao, C. M.; Yang, S. Y.; Zhu, Q. S.; Wang, Z. G. |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2009-02-02 |
| 卷号 | 94期号:5页码:3 |
| 关键词 | Aluminium compounds Conduction bands Energy gap High electron mobility transistors Iii-v semiconductors Magnesium compounds Passivation Semiconductor heterojunctions Valence bands Wide band gap semiconductors X-ray photoelectron spectra |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.3075060 |
| 通讯作者 | Yang, a. l.(alyang@semi.ac.cn) |
| 英文摘要 | Mgo is a promising gate dielectric and surface passivation film for gan/algan transistors, but little is known of the band offsets in the mgo/aln system. x-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band (delta e(v)) of mgo/aln heterostructures. a value of delta e(v)=0.22 +/- 0.08 ev was obtained. given the experimental band gap of 7.83 ev for mgo, a type-i heterojunction with a conduction band offset of similar to 1.45 ev is found. the accurate determination of the valence and conduction band offsets is important for use of iii-n alloys based electronic devices. |
| WOS关键词 | ALGAN/GAN HEMTS ; SURFACE PASSIVATION ; OXIDE ; TRANSISTORS ; SEMICONDUCTORS ; SC2O3 ; POWER ; ALN ; GAN |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000263167000028 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427723 |
| 专题 | 半导体研究所 |
| 通讯作者 | Yang, A. L. |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yang, A. L.,Song, H. P.,Liu, X. L.,et al. Determination of mgo/aln heterojunction band offsets by x-ray photoelectron spectroscopy[J]. Applied physics letters,2009,94(5):3. |
| APA | Yang, A. L..,Song, H. P..,Liu, X. L..,Wei, H. Y..,Guo, Y..,...&Wang, Z. G..(2009).Determination of mgo/aln heterojunction band offsets by x-ray photoelectron spectroscopy.Applied physics letters,94(5),3. |
| MLA | Yang, A. L.,et al."Determination of mgo/aln heterojunction band offsets by x-ray photoelectron spectroscopy".Applied physics letters 94.5(2009):3. |
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来源：半导体研究所
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