中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Characteristic study of maximum modal gain of p-doped 1.3 mu m inas/gaas quantum dot lasers

文献类型:期刊论文

作者Ji Hai-Ming; Cao Yu-Lian; Yang Tao; Ma Wen-Quan; Cao Qing; Chen Liang-Hui
刊名Acta physica sinica
出版日期2009-03-01
卷号58期号:3页码:1896-1900
关键词Maximum modal gain P-doped Inas/gaas quantum dot laser
ISSN号1000-3290
通讯作者Ji hai-ming()
英文摘要We report an experimental and theoretical study of maximum modal gain of p-doped 1.3 mu m inas/gaas quantum dot (qd) lasers. the maximum modal gain of the qd laser with five stacks of qds is as high as 17.5 cm(-1) which is the same as that of the undoped laser with identical structures. the expression of the maximum modal gain is derived and it is indicated that p-doping has no effect to the maximum modal gain. we theoretically calculated the maximum modal gain of the qd lasers and the result is in a good agreement with the experimental data. furthermore, qds with lower height or smaller aspect ratio are beneficial to achieving a greater maximum modal gain that leads to lower threshold current density and higher differential modal gain, which is good for the application of p-doped 1.3 mu m inas/gaas qd lasers in optical communications systems.
WOS关键词DENSITY-OF-STATES ; MODULATION ; PHOTOLUMINESCENCE
WOS研究方向Physics
WOS类目Physics, Multidisciplinary
语种英语
WOS记录号WOS:000264781600081
出版者CHINESE PHYSICAL SOC
URI标识http://www.irgrid.ac.cn/handle/1471x/2427729
专题半导体研究所
通讯作者Ji Hai-Ming
作者单位Chinese Acad Sci, Inst Semicond, Nanooptoelect Lab, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Ji Hai-Ming,Cao Yu-Lian,Yang Tao,et al. Characteristic study of maximum modal gain of p-doped 1.3 mu m inas/gaas quantum dot lasers[J]. Acta physica sinica,2009,58(3):1896-1900.
APA Ji Hai-Ming,Cao Yu-Lian,Yang Tao,Ma Wen-Quan,Cao Qing,&Chen Liang-Hui.(2009).Characteristic study of maximum modal gain of p-doped 1.3 mu m inas/gaas quantum dot lasers.Acta physica sinica,58(3),1896-1900.
MLA Ji Hai-Ming,et al."Characteristic study of maximum modal gain of p-doped 1.3 mu m inas/gaas quantum dot lasers".Acta physica sinica 58.3(2009):1896-1900.

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