Surface morphology of zno buffer layer and its effects on the growth of gan films on si substrates by magnetron sputtering
文献类型：期刊论文
| 作者 | Xue, Shoubin1; Zhang, Xing1; Huang, Ru1; Zhuang, Huizhao2 |
| 刊名 | Applied physics a-materials science & processing
 |
| 出版日期 | 2009-02-01 |
| 卷号 | 94期号:2页码:287-291 |
| ISSN号 | 0947-8396 |
| DOI | 10.1007/s00339-008-4777-7 |
| 通讯作者 | Xue, shoubin(xueshoubin-pku@163.com) |
| 英文摘要 | Zno thin films were first prepared on si(111) substrates using a radio frequency magnetron sputtering system. then the as-grown zno films were annealed in oxygen ambient at temperatures of 700, 800, 900, and 1000 degrees c, respectively. the morphologies of zno films were studied by an atom force microscope (afm). subsequently, gan epilayers about 500 nm thick were deposited on the zno buffer layers. the gan/zno films were annealed in nh3 ambient at 900 degrees c. the microstructure, morphology and optical properties of gan films were studied by x-ray diffraction (xrd), afm, scanning electron microscopy (sem) and photoluminescence (pl). the results are shown, their properties having been investigated particularly as a function of the zno layers. for better growth of the gan films, the optimal annealing temperature of the zno buffer layers was 900 degrees c. |
| WOS关键词 | CHEMICAL-VAPOR-DEPOSITION ; EPITAXIAL-GROWTH ; NANOWIRES ; NITRIDE ; TEMPERATURE ; EPILAYERS |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000261257100013 |
| 出版者 | SPRINGER |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427732 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xue, Shoubin |
| 作者单位 | 1.Peking Univ, SOI Grp, Inst Microelect, Beijing 100871, Peoples R China 2.Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xue, Shoubin,Zhang, Xing,Huang, Ru,et al. Surface morphology of zno buffer layer and its effects on the growth of gan films on si substrates by magnetron sputtering[J]. Applied physics a-materials science & processing,2009,94(2):287-291. |
| APA | Xue, Shoubin,Zhang, Xing,Huang, Ru,&Zhuang, Huizhao.(2009).Surface morphology of zno buffer layer and its effects on the growth of gan films on si substrates by magnetron sputtering.Applied physics a-materials science & processing,94(2),287-291. |
| MLA | Xue, Shoubin,et al."Surface morphology of zno buffer layer and its effects on the growth of gan films on si substrates by magnetron sputtering".Applied physics a-materials science & processing 94.2(2009):287-291. |
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来源：半导体研究所
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