Spin relaxation in submonolayer and monolayer inas structures grown in a gaas matrix
文献类型：期刊论文
| 作者 | Yang, Chunlei1,2; Cui, Xiaodong1; Shen, Shun-Qing1; Xu, Zhongying3; Ge, Weikun2 |
| 刊名 | Physical review b
 |
| 出版日期 | 2009-07-01 |
| 卷号 | 80期号:3页码:5 |
| ISSN号 | 1098-0121 |
| DOI | 10.1103/physrevb.80.035313 |
| 通讯作者 | Yang, chunlei() |
| 英文摘要 | Electron-spin dynamics in inas/gaas heterostructures consisting of a single layer of inas (1/3-1 monolayer) embedded in (001) and (311)a gaas matrix was studied by means of time-resolved kerr rotation spectroscopy. the spin-relaxation time of the submonolayer inas samples is significantly enhanced, compared with that of the monolayer inas sample. the electron-spin-relaxation time and the effective g factor in submonolayer samples were found to be strongly dependent on the photogenerated carrier density. the contribution from both the d'yakonov-perel' mechanism and bir-aronov-pikus mechanism are discussed to interpret the temperature dependence of spin decoherence at various carrier densities. |
| WOS关键词 | QUANTUM-WELLS ; SPINTRONICS ; ELECTRON |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000268617800085 |
| 出版者 | AMER PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427733 |
| 专题 | 半导体研究所 |
| 通讯作者 | Yang, Chunlei |
| 作者单位 | 1.Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China 2.Sun Yat Sen Univ, Sch Phys & Engn, Guangzhou 510275, Guangdong, Peoples R China 3.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yang, Chunlei,Cui, Xiaodong,Shen, Shun-Qing,et al. Spin relaxation in submonolayer and monolayer inas structures grown in a gaas matrix[J]. Physical review b,2009,80(3):5. |
| APA | Yang, Chunlei,Cui, Xiaodong,Shen, Shun-Qing,Xu, Zhongying,&Ge, Weikun.(2009).Spin relaxation in submonolayer and monolayer inas structures grown in a gaas matrix.Physical review b,80(3),5. |
| MLA | Yang, Chunlei,et al."Spin relaxation in submonolayer and monolayer inas structures grown in a gaas matrix".Physical review b 80.3(2009):5. |
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来源：半导体研究所
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