Transport properties in a gated heterostructure with a trapezoidal alxga1-xas barrier layer
文献类型：期刊论文
| 作者 | Tan, X. T.; Zheng, H. Z.; Liu, J.; Zhu, H.; Xu, P.; Li, G. R.; Yang, F. H. |
| 刊名 | Physica e-low-dimensional systems & nanostructures
 |
| 出版日期 | 2009-08-01 |
| 卷号 | 41期号:8页码:1379-1381 |
| ISSN号 | 1386-9477 |
| 关键词 | Hemt 2deg |
| DOI | 10.1016/j.physe.2009.02.020 |
| 通讯作者 | Zheng, h. z.(hzzheng@semi.ac.cn) |
| 英文摘要 | By replacing the flat (ga1-xalx)as barrier layer with a trapezoidal alxga1-xas barrier layer, a conventional heterostructure can be operated in enhancement mode. the sheet density of two-dimensional electron gas (2deg) in the structure can be tuned linearly from n-2d = 0.3 x 10(11) cm(-2) to n-2d = 4.3 x 10(11) cm(-2) by changing the bias on the top gate. the present scheme for gated heterostructures is easy to fabricate and does not require the use of self-alignment photolithography or the deposition of insulating layers. in addition, this scheme facilitates the initial electrical contact to 2deg. although, the highest electron mobility obtained for the moment is limited by the background doping level of heterostructures, the mobility should be improved substantially in the future. (c) 2009 elsevier b.v. all rights reserved. |
| WOS关键词 | 2-DIMENSIONAL ELECTRON-GAS ; UNDOPED HETEROSTRUCTURE |
| WOS研究方向 | Science & Technology - Other Topics ; Physics |
| WOS类目 | Nanoscience & Nanotechnology ; Physics, Condensed Matter |
| 语种 | 英语 |
| 出版者 | ELSEVIER SCIENCE BV |
| WOS记录号 | WOS:000268384900003 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427754 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zheng, H. Z. |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Microstruct & Superlattices, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Tan, X. T.,Zheng, H. Z.,Liu, J.,et al. Transport properties in a gated heterostructure with a trapezoidal alxga1-xas barrier layer[J]. Physica e-low-dimensional systems & nanostructures,2009,41(8):1379-1381. |
| APA | Tan, X. T..,Zheng, H. Z..,Liu, J..,Zhu, H..,Xu, P..,...&Yang, F. H..(2009).Transport properties in a gated heterostructure with a trapezoidal alxga1-xas barrier layer.Physica e-low-dimensional systems & nanostructures,41(8),1379-1381. |
| MLA | Tan, X. T.,et al."Transport properties in a gated heterostructure with a trapezoidal alxga1-xas barrier layer".Physica e-low-dimensional systems & nanostructures 41.8(2009):1379-1381. |
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来源：半导体研究所
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