Deep levels in high resistivity gan detected by thermally stimulated luminescence and first-principles calculations
文献类型：期刊论文
| 作者 | Gai, Yanqin1; Li, Jingbo1; Hou, Qifeng2; Wang, Xiaoliang2; Xiao, Hongling2; Wang, Cuimei2; Li, Jinmin2 |
| 刊名 | Journal of physics d-applied physics
 |
| 出版日期 | 2009-08-07 |
| 卷号 | 42期号:15页码:4 |
| ISSN号 | 0022-3727 |
| DOI | 10.1088/0022-3727/42/15/155403 |
| 通讯作者 | Li, jingbo(jbli@semi.ac.cn) |
| 英文摘要 | Thermally stimulated luminescence spectroscopy has been applied to study the deep centres in unintentionally doped high resistivity gan epilayers grown by the metal organic chemical vapour deposition method on c-sapphire substrates. two trap states with activation energies of 0.12 and 0.62 ev are evaluated from two luminescence peaks at 141.9 and 294.7 k in the luminescence curve. our spectroscopy measurement, in combination with more accurate first-principles studies, provided insights into the microscopic origin of these levels. our investigations suggest that the lower level at 0.12 ev might originate from c(n), which behaves as a hole trap state; the deeper level at 0.62 ev can be correlated with v(ga) that corresponds to the yellow luminescence band observed in low-temperature photoluminescence spectra. |
| WOS关键词 | N-TYPE GAN ; ELECTRON-MOBILITY TRANSISTORS ; VAPOR-PHASE EPITAXY ; DEFECTS ; THERMOLUMINESCENCE ; CARBON ; TRAP |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| 出版者 | IOP PUBLISHING LTD |
| WOS记录号 | WOS:000268042200031 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427756 |
| 专题 | 半导体研究所 |
| 通讯作者 | Li, Jingbo |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Gai, Yanqin,Li, Jingbo,Hou, Qifeng,et al. Deep levels in high resistivity gan detected by thermally stimulated luminescence and first-principles calculations[J]. Journal of physics d-applied physics,2009,42(15):4. |
| APA | Gai, Yanqin.,Li, Jingbo.,Hou, Qifeng.,Wang, Xiaoliang.,Xiao, Hongling.,...&Li, Jinmin.(2009).Deep levels in high resistivity gan detected by thermally stimulated luminescence and first-principles calculations.Journal of physics d-applied physics,42(15),4. |
| MLA | Gai, Yanqin,et al."Deep levels in high resistivity gan detected by thermally stimulated luminescence and first-principles calculations".Journal of physics d-applied physics 42.15(2009):4. |
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来源：半导体研究所
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