Passivation of copper by lithium in p-type gaas
文献类型：期刊论文
| 作者 | EGILSSON, T; GISLASON, HP; YANG, BH |
| 刊名 | Physical review b
 |
| 出版日期 | 1994-07-15 |
| 卷号 | 50期号:3页码:1996-1998 |
| ISSN号 | 1098-0121 |
| 通讯作者 | Egilsson, t() |
| 英文摘要 | We report the passivation of two deep copper-related acceptor levels in cu-diffused p-type gaas by the group-i element lithium. the deep-level-transient-spectroscopy (dlts) signals of the well-known cu-related levels with apparent activation energies 0.15 ev and 0.40 ev disappear in cu-diffused samples when they are diffused with li, but can be reactivated by annealing. photoluminescence measurements show a corresponding disappearance and reappearance of the copper-related luminescence at 1.36 ev. also we observe with dlt's an energy level at e(v) + 0.32 ev in the cu-li-diff-used samples. the level is neither present in the cu-diffused samples before li diffusion nor in cu-li-diffused samples after annealing. as the level is not observed in starting materials or solely li-diffused samples we suggest that it is related to a cu-li complex. |
| WOS关键词 | PHOTO-LUMINESCENCE ; DEUTERIUM ; IMPURITY ; DEFECTS ; CU |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:A1994NZ15300083 |
| 出版者 | AMER PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427770 |
| 专题 | 半导体研究所 |
| 通讯作者 | EGILSSON, T |
| 作者单位 | 1.CHINESE ACAD SCI, SEMICOND MAT SCI LAB, BEIJING, PEOPLES R CHINA 2.CHINESE ACAD SCI, INST SEMICOND, BEIJING, PEOPLES R CHINA |
| 推荐引用方式 GB/T 7714 | EGILSSON, T,GISLASON, HP,YANG, BH. Passivation of copper by lithium in p-type gaas[J]. Physical review b,1994,50(3):1996-1998. |
| APA | EGILSSON, T,GISLASON, HP,&YANG, BH.(1994).Passivation of copper by lithium in p-type gaas.Physical review b,50(3),1996-1998. |
| MLA | EGILSSON, T,et al."Passivation of copper by lithium in p-type gaas".Physical review b 50.3(1994):1996-1998. |
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来源：半导体研究所
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