Comparison of short period inas/gasb superlattices on gasb and gaas substrates
文献类型：期刊论文
| 作者 | Guo Jie1,2; Chen HuiJuan2; Sun WeiGuo2; Hao RuiTing3; Xu YingQiang3; Niu ZhiChuan3 |
| 刊名 | Science in china series e-technological sciences
 |
| 出版日期 | 2009 |
| 卷号 | 52期号:1页码:23-27 |
| ISSN号 | 1006-9321 |
| 关键词 | Inas/gasb Superlattice Substrates Infrared detector |
| DOI | 10.1007/s11431-008-0352-x |
| 通讯作者 | Guo jie(jieggg1020@sina.com) |
| 英文摘要 | Type ii superlattices (sls) short period inas(4ml)/gasb(8ml) were grown by molecular-beam epitaxy on lattice-mismatched gaas substrates and on gasb substrates. a smooth gasb epilayer was formed on gaas substrates by inserting mulit-buffer layers including an interfacial misfit mode alsb quantum dot layer and alsb/gasb superlattices smooth layer. sls grown on gaas substrates (gaas-based sls) showed well-resolved satellite peaks in xrd. gasb-based sls with better structural quality and smoother surface showed strong photoluminescence at 2.55 mu m with a full width at half maximum (fwhm) of 20 mev, narrower than 31 mev of gaas-based sls. inferior optical absorption of gaas-based sl was observed in the range of 2-3 mu m. photoresponse of gasb-based sls showed the cut-off wavelength at 2.6 mu m. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; INAS/GA1-XINXSB SUPERLATTICE ; INFRARED PHOTODIODES ; GROWTH ; LAYERS ; INAS |
| WOS研究方向 | Engineering ; Materials Science |
| WOS类目 | Engineering, Multidisciplinary ; Materials Science, Multidisciplinary |
| 语种 | 英语 |
| 出版者 | SCIENCE PRESS |
| WOS记录号 | WOS:000262485100006 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427772 |
| 专题 | 半导体研究所 |
| 通讯作者 | Guo Jie |
| 作者单位 | 1.NW Polytech Univ, Sch Mat, Xian 610000, Peoples R China 2.Luoyang Opt Elect Ctr, Luoyang 471009, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Guo Jie,Chen HuiJuan,Sun WeiGuo,et al. Comparison of short period inas/gasb superlattices on gasb and gaas substrates[J]. Science in china series e-technological sciences,2009,52(1):23-27. |
| APA | Guo Jie,Chen HuiJuan,Sun WeiGuo,Hao RuiTing,Xu YingQiang,&Niu ZhiChuan.(2009).Comparison of short period inas/gasb superlattices on gasb and gaas substrates.Science in china series e-technological sciences,52(1),23-27. |
| MLA | Guo Jie,et al."Comparison of short period inas/gasb superlattices on gasb and gaas substrates".Science in china series e-technological sciences 52.1(2009):23-27. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。