Fabrication of gan nanowires by ammoniating ga2o3/nicl2 films deposited on si substrates
文献类型：期刊论文
| 作者 | Xue, Chengshan; Wang, Ying; Zhuang, Huizhao; Wang, Zouping; Huang, Yinglong; Zhang, Dongdong; Cao, Yuping |
| 刊名 | Journal of alloys and compounds
 |
| 出版日期 | 2009-09-18 |
| 卷号 | 484期号:1-2页码:33-35 |
| 关键词 | Single crystal growth Chemical vapor deposition processes Nanomaterials |
| ISSN号 | 0925-8388 |
| DOI | 10.1016/j.jallcom.2009.05.086 |
| 通讯作者 | Xue, chengshan(xuechengshan@sdnu.edu.cn) |
| 英文摘要 | Gan nanowires were synthesized successfully through ammoniating ga2o3/nicl2 films deposited on the unpolished si substrate. x-ray diffraction (xrd), scanning electron microscopy (sem), high-resolution transmission electron microscope (hrtem) and fourier transformed infrared spectra (ftir) are used to characterize the samples. the results demonstrate that the nanowires are single-crystal gan with hexagonal wurtzite structure. the growth mechanism of gan nanowires is also discussed. (c) 2009 elsevier b.v. all rights reserved. |
| WOS关键词 | LIGHT-EMITTING-DIODES ; GALLIUM NITRIDE ; ABSORPTION ; NANORODS ; CARBON |
| WOS研究方向 | Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering |
| WOS类目 | Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000271334900009 |
| 出版者 | ELSEVIER SCIENCE SA |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427784 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xue, Chengshan |
| 作者单位 | Shandong Normal Univ, Coll Phys & Elect, Inst Semicond, Jinan 250014, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xue, Chengshan,Wang, Ying,Zhuang, Huizhao,et al. Fabrication of gan nanowires by ammoniating ga2o3/nicl2 films deposited on si substrates[J]. Journal of alloys and compounds,2009,484(1-2):33-35. |
| APA | Xue, Chengshan.,Wang, Ying.,Zhuang, Huizhao.,Wang, Zouping.,Huang, Yinglong.,...&Cao, Yuping.(2009).Fabrication of gan nanowires by ammoniating ga2o3/nicl2 films deposited on si substrates.Journal of alloys and compounds,484(1-2),33-35. |
| MLA | Xue, Chengshan,et al."Fabrication of gan nanowires by ammoniating ga2o3/nicl2 films deposited on si substrates".Journal of alloys and compounds 484.1-2(2009):33-35. |
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来源：半导体研究所
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