Controlled growth of silicon nanowires by solid-liquid-solid method and their formation mechanism
文献类型:期刊论文
作者 | Peng Ying-Cai1,2; Fan Zhi-Dong1; Bai Zhen-Hua1; Ma Lei1 |
刊名 | Acta physica sinica
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出版日期 | 2010-02-01 |
卷号 | 59期号:2页码:1169-1174 |
关键词 | Silicon nanowires Au-si liquid droplet alloys Solid-liquid-solid growth Structural characteristics |
ISSN号 | 1000-3290 |
通讯作者 | Peng ying-cai(ycpeng2002@163.com) |
英文摘要 | High quality silicon nanowires (sinws) were grown directly from n-(111) silicon single crystal substrate by using au film as a metallic catalyst. the diameter and length of the formed nanowires are 30-60 nm and from several micrometers to sereral tens of micrometers, respectively. the effects of au film thickness, annealing temperature, growth time and n(2) gas flow rate on the formation of the nanowires were experimentally investigated. the results confirmed that the silicon nanowires with controlled diameter, length, shape and orientation can be obtained via reasonably choosing and optimizing various technical conditions. the formation process of the silicon nanowires is analyzed qualitatively based on solid-liquid-solid growth mechanism. |
WOS关键词 | SI NANOWIRES ; NI CATALYSTS |
WOS研究方向 | Physics |
WOS类目 | Physics, Multidisciplinary |
语种 | 英语 |
WOS记录号 | WOS:000274699000069 |
出版者 | CHINESE PHYSICAL SOC |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427788 |
专题 | 半导体研究所 |
通讯作者 | Peng Ying-Cai |
作者单位 | 1.Hebei Univ, Coll Elect & Informat Engn, Baoding 071002, Peoples R China 2.Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Peng Ying-Cai,Fan Zhi-Dong,Bai Zhen-Hua,et al. Controlled growth of silicon nanowires by solid-liquid-solid method and their formation mechanism[J]. Acta physica sinica,2010,59(2):1169-1174. |
APA | Peng Ying-Cai,Fan Zhi-Dong,Bai Zhen-Hua,&Ma Lei.(2010).Controlled growth of silicon nanowires by solid-liquid-solid method and their formation mechanism.Acta physica sinica,59(2),1169-1174. |
MLA | Peng Ying-Cai,et al."Controlled growth of silicon nanowires by solid-liquid-solid method and their formation mechanism".Acta physica sinica 59.2(2010):1169-1174. |
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来源:半导体研究所
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