First principles study of electronic properties of gallium nitride nanowires grown along different crystal directions
文献类型：期刊论文
| 作者 | Wang, Zhiguo1,2; Zhang, Chunlai1; Li, Jingbo2; Gao, Fei3; Weber, William J.3 |
| 刊名 | Computational materials science
 |
| 出版日期 | 2010-12-01 |
| 卷号 | 50期号:2页码:344-348 |
| ISSN号 | 0927-0256 |
| 关键词 | Gan nanowires Electronic properties First principles |
| DOI | 10.1016/j.commatsci.2010.08.024 |
| 通讯作者 | Wang, zhiguo(zgwang@uestc.edu.cn) |
| 英文摘要 | The electronic properties of hydrogen-saturated gan nanowires with different orientations and sizes are investigated using first principles calculations, and three types of nanowires oriented along the [0 0 1], [1 1 0] and [1 - 1 0] crystal directions are considered. the electronic properties of nanowires in all three directions are extremely similar. all the hydrogen-saturated gan nanowires show semiconducting behavior with a direct band gap larger than that of bulk wurtzite gan. quantum confinement leads to a decrease in the band gap of the nanowires with increasing nanowire size. the [0 0 1]-oriented nanowires with hexagonal cross sections are energetically more favorable than the [1 0 0]- and [1 -1 0]-oriented nanowires with triangular cross sections. (c) 2010 elsevier b.v. all rights reserved. |
| WOS关键词 | GAN NANOWIRES ; AB-INITIO ; EMISSION PROPERTIES ; SEMICONDUCTORS ; ARRAYS |
| WOS研究方向 | Materials Science |
| WOS类目 | Materials Science, Multidisciplinary |
| 语种 | 英语 |
| 出版者 | ELSEVIER SCIENCE BV |
| WOS记录号 | WOS:000285657600012 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427790 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang, Zhiguo |
| 作者单位 | 1.Univ Elect Sci & Technol China, Dept Appl Phys, Chengdu 610054, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 3.Pacific NW Natl Lab, Richland, WA 99352 USA |
| 推荐引用方式 GB/T 7714 | Wang, Zhiguo,Zhang, Chunlai,Li, Jingbo,et al. First principles study of electronic properties of gallium nitride nanowires grown along different crystal directions[J]. Computational materials science,2010,50(2):344-348. |
| APA | Wang, Zhiguo,Zhang, Chunlai,Li, Jingbo,Gao, Fei,&Weber, William J..(2010).First principles study of electronic properties of gallium nitride nanowires grown along different crystal directions.Computational materials science,50(2),344-348. |
| MLA | Wang, Zhiguo,et al."First principles study of electronic properties of gallium nitride nanowires grown along different crystal directions".Computational materials science 50.2(2010):344-348. |
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来源：半导体研究所
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