中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
A broadband external cavity tunable inas/gaas quantum dot laser by utilizing only the ground state emission

文献类型:期刊论文

作者Lue Xue-Qin; Jin Peng; Wang Zhan-Guo
刊名Chinese physics b
出版日期2010
卷号19期号:1页码:4
关键词Quantum-dot Tunable laser External cavity Broadband tuning
ISSN号1674-1056
通讯作者Jin peng(pengjin@red.semi.ac.cn)
英文摘要A broadband external cavity tunable laser is realized by using a broad-emitting spectral inas/gaas quantum dot (qd) gain device. a tuning range of 69 nm with a central wavelength of 1056 nm, is achieved at a bias of 1.25 ka/cm(2) only by utilizing the light emission from the ground state of qds. this large tunable range only covers the qd ground-state emission and is related to the inhomogeneous size distribution of qds. no excited state contributes to the tuning bandwidth. the application of the qd gain device to the external cavity tunable laser shows its immense potential in broadening the tuning bandwidth. by the external cavity feedback, the threshold current density can be reduced remarkably compared with the free-running qd gain device.
WOS关键词NM TUNING RANGE ; SUPERLUMINESCENT DIODES ; LIGHT-SOURCE ; WELL LASER ; SPECTROSCOPY ; SPECTRUM
WOS研究方向Physics
WOS类目Physics, Multidisciplinary
语种英语
WOS记录号WOS:000273586000091
出版者IOP PUBLISHING LTD
URI标识http://www.irgrid.ac.cn/handle/1471x/2427791
专题半导体研究所
通讯作者Jin Peng
作者单位Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Lue Xue-Qin,Jin Peng,Wang Zhan-Guo. A broadband external cavity tunable inas/gaas quantum dot laser by utilizing only the ground state emission[J]. Chinese physics b,2010,19(1):4.
APA Lue Xue-Qin,Jin Peng,&Wang Zhan-Guo.(2010).A broadband external cavity tunable inas/gaas quantum dot laser by utilizing only the ground state emission.Chinese physics b,19(1),4.
MLA Lue Xue-Qin,et al."A broadband external cavity tunable inas/gaas quantum dot laser by utilizing only the ground state emission".Chinese physics b 19.1(2010):4.

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来源:半导体研究所

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