Homogeneous epitaxial growth of n,n '-di(n-butyl)quinacridone thin films on ag(110)
文献类型：期刊论文
| 作者 | Lin, Feng2,3; Fang, Zheyu2,3; Qu, Shengchun4; Huang, Shan2,3; Song, Wentao2,3; Chi, Lifeng1; Zhu, Xing2,3 |
| 刊名 | Journal of nanoscience and nanotechnology
 |
| 出版日期 | 2010-11-01 |
| 卷号 | 10期号:11页码:7162-7166 |
| 关键词 | Qa4c Molecular beam epitaxy (mbe) Leed Commensurate and incommensurate |
| ISSN号 | 1533-4880 |
| DOI | 10.1166/jnn.2010.2889 |
| 通讯作者 | Chi, lifeng() |
| 英文摘要 | The structural evolution of the ordered n-n' dibutyl-substituted quinacridone (qa4c) multilayers (3 mls) has been monitored in situ and in real time at various substrate temperatures using low energy electron diffraction (leed) during organic molecular beam epitaxy (mbe). experimental results of leed patterns clearly reveal that the structure of the multilayer strongly depends on the substrate temperature. multilayer growth can be achieved at the substrate temperatures below 300 k, while at the higher temperatures we can only get one ordered monolayer of qa4c. two kinds of structures, the commensurate and incommensurate one, often coexist in the qa4c multilayer. with a method of the two-step substrate temperatures, the incommensurate one can be suppressed, and the commensurate, on the other hand, more similar to the (001) plane of the qa4c bulk crystal, prevails with the layer of qa4c increasing to 3 mls. the two structures in the multilayers are compressed slightly in comparison to the original ones in the first monolayer. |
| WOS关键词 | MOLECULAR-BEAM DEPOSITION ; QUASIEPITAXIAL GROWTH ; ORGANIC FILMS ; LEED ; PTCDA ; STM ; MONOLAYERS ; GRAPHITE |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| WOS类目 | Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000283621300037 |
| 出版者 | AMER SCIENTIFIC PUBLISHERS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427793 |
| 专题 | 半导体研究所 |
| 通讯作者 | Chi, Lifeng |
| 作者单位 | 1.Univ Munster, Inst Phys, D-48149 Munster, Germany 2.Peking Univ, Sch Phys, Beijing 100871, Peoples R China 3.Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China 4.Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Lin, Feng,Fang, Zheyu,Qu, Shengchun,et al. Homogeneous epitaxial growth of n,n '-di(n-butyl)quinacridone thin films on ag(110)[J]. Journal of nanoscience and nanotechnology,2010,10(11):7162-7166. |
| APA | Lin, Feng.,Fang, Zheyu.,Qu, Shengchun.,Huang, Shan.,Song, Wentao.,...&Zhu, Xing.(2010).Homogeneous epitaxial growth of n,n '-di(n-butyl)quinacridone thin films on ag(110).Journal of nanoscience and nanotechnology,10(11),7162-7166. |
| MLA | Lin, Feng,et al."Homogeneous epitaxial growth of n,n '-di(n-butyl)quinacridone thin films on ag(110)".Journal of nanoscience and nanotechnology 10.11(2010):7162-7166. |
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来源：半导体研究所
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