High resistance algaas/gaas quantum cascade detectors grown by solid source molecular beam epitaxy operating above liquid nitrogen temperature
文献类型：期刊论文
| 作者 | Liu, Junqi; Kong, Ning; Li, Lu; Liu, Fengqi; Wang, Lijun; Chen, Jianyan; Wang, Zhanguo |
| 刊名 | Semiconductor science and technology
 |
| 出版日期 | 2010-07-01 |
| 卷号 | 25期号:7页码:4 |
| ISSN号 | 0268-1242 |
| DOI | 10.1088/0268-1242/25/7/075011 |
| 通讯作者 | Liu, junqi(jqliu@semi.ac.cn) |
| 英文摘要 | Quantum cascade detectors in the algaas/gaas material system have been grown by solid source molecular beam epitaxy. the growth direction of the active region is chosen carefully due to the existence of a doping concentration grade along the epilayers. for a 200 x 200 mu m(2) square mesa device, the detector operates above 90 k with a peak detection wavelength of 8.81 mu m, and exhibits a high r(0)a about 4.5 x 10(6) omega cm(2) and a high johnson noise limited detectivity d-j* about 3.9 x 10(10) jones at this temperature. |
| WOS关键词 | WELL INFRARED PHOTODETECTORS |
| WOS研究方向 | Engineering ; Materials Science ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000279319600011 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427795 |
| 专题 | 半导体研究所 |
| 通讯作者 | Liu, Junqi |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, Junqi,Kong, Ning,Li, Lu,et al. High resistance algaas/gaas quantum cascade detectors grown by solid source molecular beam epitaxy operating above liquid nitrogen temperature[J]. Semiconductor science and technology,2010,25(7):4. |
| APA | Liu, Junqi.,Kong, Ning.,Li, Lu.,Liu, Fengqi.,Wang, Lijun.,...&Wang, Zhanguo.(2010).High resistance algaas/gaas quantum cascade detectors grown by solid source molecular beam epitaxy operating above liquid nitrogen temperature.Semiconductor science and technology,25(7),4. |
| MLA | Liu, Junqi,et al."High resistance algaas/gaas quantum cascade detectors grown by solid source molecular beam epitaxy operating above liquid nitrogen temperature".Semiconductor science and technology 25.7(2010):4. |
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来源：半导体研究所
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