Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face iii-nitride structure
文献类型：期刊论文
| 作者 | Zhang, L.; Ding, K.; Yan, J. C.; Wang, J. X.; Zeng, Y. P.; Wei, T. B.; Li, Y. Y.; Sun, B. J.; Duan, R. F.; Li, J. M. |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2010-08-09 |
| 卷号 | 97期号:6页码:3 |
| 关键词 | Aluminium compounds Electron gas Gallium compounds Iii-v semiconductors Mocvd Polarisation Semiconductor doping Semiconductor thin films Wide band gap semiconductors |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.3478556 |
| 通讯作者 | Ding, k.(dingkai@red.semi.ac.cn) |
| 英文摘要 | Polarization-doping via graded algan layer on n-face (000 (1) over bar) gan has been demonstrated as an inspiring p-type doping method for wide-band-gap nitrides. however, the polarity of iii-nitrides grown by metal organic chemical vapor deposition is metal-face typically. in this paper, we show that three-dimensional mobile hole gas induced by polarization can be formed in (0001)-oriented metal-face iii-nitride structure. the hole concentration of a mg-doped alxga1-xn layer with graded al composition from x=0.3 to 0 grown on aln buffer layer is remarkably enhanced, compared with that of a mg-doped gan layer grown under the same conditions. in addition, the hole concentration in the graded algan layer is absence of freezeout as the temperature decreases, indicating that the hole is induced by polarization. this p-type doping method paves a way for achieving high-efficiency in wide-band-gap semiconductor light-emitting devices with p-type doping problem. (c) 2010 american institute of physics. [doi:10.1063/1.3478556] |
| WOS关键词 | HETEROSTRUCTURES |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000280940900033 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427798 |
| 专题 | 半导体研究所 |
| 通讯作者 | Ding, K. |
| 作者单位 | Chinese Acad Sci, Res & Dev Ctr Semicond Lighting, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, L.,Ding, K.,Yan, J. C.,et al. Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face iii-nitride structure[J]. Applied physics letters,2010,97(6):3. |
| APA | Zhang, L..,Ding, K..,Yan, J. C..,Wang, J. X..,Zeng, Y. P..,...&Li, J. M..(2010).Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face iii-nitride structure.Applied physics letters,97(6),3. |
| MLA | Zhang, L.,et al."Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face iii-nitride structure".Applied physics letters 97.6(2010):3. |
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来源：半导体研究所
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